Vertical Trench Transistor Layout for Fast Drain Transient Sensing
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Solution Overview
Problem
Vertical transistor devices face challenges in sensing fast transients in drain to source voltage variations, which can lead to dynamic avalanches and return-on events, causing potential failure or degradation, and existing solutions require separate sense electrodes that increase area and complexity.
Innovation Solution
Incorporating a sense electrode contact at a lateral position spaced apart from the control electrode contact within the same trench electrode, allowing the trench electrode to be used capacitively for sensing backside potential variations, thereby reducing area requirements and enabling internal or external countermeasures for fast transient detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a separate sense electrode is added beside the transistor device for sensing backside potential, then sensing capability is improved, but device area increases
Solution Approach 1:
The trench electrode is designed to serve dual functions: as a control electrode for applying electrical potential to the semiconductor body and as a sense electrode for sensing backside potential variations through capacitive coupling. This multi-functionality eliminates the need for a separate sense electrode, thereby maintaining sensing capability while reducing device area.
Solution Approach 2:
The patent merges the control electrode and sense electrode functions into a single trench electrode structure. By providing both a control electrode contact and a sense electrode contact connected to the same trench electrode, the design combines what would traditionally be separate components, reducing overall device area while maintaining both control and sensing capabilities.
2Area of stationary object
If the sense electrode contact is placed close to the control electrode contact, then area is reduced, but sensing accuracy deteriorates due to internal resistance
Solution Approach 1:
The trench electrode is designed with spatially differentiated contact positions: the control electrode contact is positioned at a first lateral position optimized for control signal application, while the sense electrode contact is positioned at a second lateral position spaced apart to minimize the influence of internal resistance on sensing accuracy. This local differentiation of contact functions along the trench electrode resolves the contradiction between area reduction and sensing accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for effective sensing of fast transients and potential failures, enabling timely countermeasures while maintaining a compact design by utilizing the active trench electrode for both control and sensing functions, thus preventing device degradation.
Implementation Method 1
the first trench electrode can be used as a first capacitor electrode which forms a capacitor together with a second capacitor electrode disposed at the second side of the semiconductor body, in particular with the drain region in case of a common drain backside
Data Source
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AI summary
A semiconductor die (1) with a semiconductor body (15), the semiconductor die (1) comprising a transistor device (10) comprising a source region (11) at a first side (15.1) of the semiconductor body (15), a drain region (12) at a second side (15.2) of the semiconductor body (15), a trench (25) extending from the first side (15.1) into the semiconductor body (15) and having an elongated lateral extension, a first trench electrode (30) for a channel creation or field shaping, having an elongated lateral extension (35) and disposed in the trench (25), and a control electrode contact (31) contacting the first trench electrode (30) from the first side (15.1) of the semiconductor body (15) for applying an electrical potential, the control electrode contact (31) disposed at a first lateral position (41); and a sense electrode contact (32) contacting the first trench electrode (30) from the first side (15.1) of the semiconductor body (15) for sensing a voltage from the first trench electrode (30), wherein the sense electrode contact (32) is disposed at a second lateral position (42) which is spaced from the first lateral position (41).