Trench-Gate Transistor With Segmented Electrodes
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Solution Overview
Problem
Current semiconductor devices with trench-gate type power transistors face limitations in performance enhancement, particularly in optimizing ON resistance and parasitic capacitance, which affect their efficiency and reliability.
Innovation Solution
The semiconductor device incorporates a trench-gate type field effect transistor configuration with a control electrode and gate electrode separated by insulating films, allowing independent control of the control electrode's potential, which is not connected to the source or gate electrodes, enabling optimized voltage application for reduced ON resistance and parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional trench-gate structure is used, then the device structure is simple, but the ON resistance and parasitic capacitance cannot be optimized
Solution Approach 1:
The gate electrode is segmented into two independent parts: a control electrode (first electrode) and a gate electrode (second electrode). These segments are electrically isolated by insulating films, allowing independent potential control. This segmentation enables separate optimization of ON resistance (via gate electrode) and parasitic capacitance (via control electrode), resolving the contradiction between performance improvement and structural simplicity.
Solution Approach 2:
Insulating films are introduced as intermediary elements between the control electrode and gate electrode, and between these electrodes and the semiconductor substrate. These intermediaries enable electrical isolation while maintaining physical proximity, allowing independent control of electrode potentials without direct electrical connection. This mediator approach achieves performance optimization without requiring complex external control circuits.
2Ease of operation
If the control electrode is connected to the gate electrode or source through conductor, then the structure is simpler, but independent potential control is lost
Solution Approach 1:
The gate structure is divided into electrically isolated segments (control electrode and gate electrode) separated by insulating films. This segmentation enables independent potential control of each electrode, allowing separate optimization of transistor characteristics without requiring external control circuits, thus improving ease of operation while maintaining structural integration.
Solution Approach 2:
The insulating films within the trench structure provide automatic electrical isolation between electrodes, eliminating the need for external control circuits or additional isolation components. The structure itself provides the control mechanism through its inherent insulating layers, achieving independent electrode control through self-service design.
Data Source
AI summary
A control electrode GE1 is formed in a lower portion of a trench TR1 formed in a semiconductor substrate SUB, and a gate electrode GE2 is formed in an upper portion inside the trench TR1. An insulating film G1 is formed between the control electrode GE1 and a side wall and a bottom surface of the trench TR1, an insulating film G2 is formed between the side wall of the trench TR1 and the gate electrode GE2, and an insulating film G3 is formed between the control electrode GE1 and the gate electrode GE2. A region adjacent to the trench TR1 includes an n+-type semiconductor region NR for a source, a p-type semiconductor region PR for a channel formation, and a semiconductor region for a drain. A wiring connected to the control electrode GE1 is not connected to a wiring connected to the gate electrode GE2, and is not connected to a wiring connected to the n+-type semiconductor region NR for a source.