Trench-Gate MOS Transistor Gate Structure for Void Stability
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Solution Overview
Problem
Trench-gate MOS transistor characteristics degrade due to voids in the gate electrode within the gate trench, affecting transistor performance.
Innovation Solution
A semiconductor device design where the inner surface of voids within the gate electrode is covered with an insulating film, preventing void movement and maintaining its position apart from insulating films, thereby stabilizing the gate electrode structure and preventing degradation of transistor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a gate electrode is formed inside a gate trench, then the transistor structure is completed, but voids may form within the gate electrode causing degradation of transistor characteristics
Solution Approach 1:
An insulating film is formed on the inner surface of the gate trench before forming the gate electrode. This preliminary action prevents void formation during subsequent gate electrode fabrication processes, ensuring complete filling and eliminating manufacturing precision issues that would otherwise degrade transistor characteristics
Solution Approach 2:
The insulating film acts as an intermediary layer between the gate trench and the gate electrode. It prevents direct contact that would allow void formation, while still allowing the gate electrode to be properly formed and function, thus resolving the contradiction between completing the transistor structure and preventing void-induced degradation
Data Source
AI summary
A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; and a control electrode between the semiconductor part and the second electrode. The control electrode is provided inside a trench of the semiconductor part. The control electrode is electrically insulated from the semiconductor part by a first insulating film and electrically insulated from the second electrode by a second insulating film. The control electrode includes an insulator at a position apart from the first insulating film and the second insulating film. The semiconductor part includes a first layer of a first conductivity type provided between the first and second electrodes, the second layer of a second conductivity type provided between the first layer and the second electrode and the third layer of the first conductivity type selectively provided between the second layer and the second electrode.