Trench Gate IGBT Channel Layout for Current Concentration Control
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Solution Overview
Problem
Current semiconductor devices, specifically IE type trench gate IGBTs, face the issue of current concentration at the lower portion of the active cell region, leading to heat generation and potential thermal breakdown.
Innovation Solution
The semiconductor device incorporates a design where the first and second trench gate electrodes have channel regions with position ranges that differ from each other, preventing current concentration in the lower portion of the active cell region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If IE type trench gate IGBT structure is used, then injection enhancement effect is achieved, but current concentration occurs at lower portion of active cell region
Solution Approach 1:
The patent divides the active cell region into multiple regions with different trench gate electrode configurations. Specifically, it segments the device into a first active cell region with first trench gate electrodes and a second active cell region with second trench gate electrodes, where the trench gate electrodes in different regions have different positions, widths, or depths. This segmentation allows different regions to handle current differently, preventing concentration at the lower portion while maintaining overall injection enhancement.
Solution Approach 2:
The patent applies local quality by giving different characteristics to trench gate electrodes in different regions of the active cell region. The first trench gate electrodes in the first active cell region have different positional or dimensional characteristics compared to the second trench gate electrodes in the second active cell region. This local differentiation ensures that current distribution is optimized locally in each region, preventing harmful concentration effects.
2Loss of energy
If current concentration occurs at lower portion of active cell region, then Joule heat generation increases, but device reliability decreases
Solution Approach 1:
By segmenting the active cell region into multiple regions with different trench gate configurations, the patent distributes current flow paths across different spatial locations. This segmentation prevents current from concentrating in a single lower portion, thereby reducing localized Joule heat generation and improving overall device reliability.
Solution Approach 2:
The patent introduces asymmetry in the trench gate electrode configuration between different regions. The first and second trench gate electrodes have different positions, widths, or depths, creating asymmetric current distribution patterns that avoid the symmetric concentration that would occur at the lower portion of a uniform structure. This asymmetric design redistributes heat generation more evenly across the device.
Data Source
AI summary
An IGBT includes a first trench gate electrode extending in a first width direction, and a second trench gate electrode facing the first trench gate electrode. A first position range in the first width direction of a first channel region formed by the first trench gate electrode and a second position range in the first width direction of a second channel region formed by the second trench gate electrode differ from each other.