Trench Isolation Structure With Leaning Control for Gap Fill

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Solution Overview

Problem

The increasing integration density of semiconductor devices poses challenges in filling insulating layers between high-aspect-ratio patterns, leading to defects such as leaning during the process.

Innovation Solution

A semiconductor device with a leaning control layer on the sidewalls and bottoms of trenches, combined with a gap-fill insulating layer, where trenches of varying depths are used to control pattern deformation and filling, utilizing a compressive stress liner to manage the zip-up phenomenon and ensure proper layer bonding.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a plurality of patterns with high aspect ratio are used to increase integration density, then the integration density is improved, but the difficulty of filling insulating layer increases and defects such as leaning occur

Engineering Contradiction:

Improveintegration densityVSAvoidfilling quality

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

A leaning control layer is formed on the sidewalls and bottoms of trenches before filling the insulating layer. This preliminary action prevents pattern leaning during the filling process by providing structural support, thereby enabling successful filling of high-aspect-ratio trenches while maintaining high integration density

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The leaning control layer acts as an intermediary between the high-aspect-ratio patterns and the insulating layer. It mediates the filling process by preventing direct contact between the insulating layer and pattern sidewalls, thus avoiding leaning defects while enabling complete trench filling

Inventive Principle:

Principle #24Intermediary (Mediator)

2Manufacturing precision

If trenches of different depths are used to control pattern deformation, then the manufacturing precision is improved, but the device complexity increases

Engineering Contradiction:

Improvepattern deformation controlVSAvoidtrench depth variation

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

Trenches are designed with different depths at different locations to provide localized support where needed. Shallow trenches are formed in regions prone to pattern leaning, while deeper trenches are formed in other regions, creating a non-uniform trench depth profile that optimizes pattern deformation control across the device structure

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The trench structure transitions from a symmetric, uniform depth design to an asymmetric design with varying depths. This asymmetric trench configuration allows differential support for patterns in different regions, enabling precise control of pattern deformation while managing the increased structural complexity

Inventive Principle:

Principle #4Asymmetry

Data Source

PatentUS11854864B2Semiconductor device including trench isolation layer and method of forming the same

Publication Date: 2023.12.26 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device includes a plurality of patterns defined between a plurality of trenches and disposed on a substrate. A leaning control layer is disposed on sidewalls and bottoms of the plurality of trenches. A gap-fill insulating layer is disposed on the leaning control layer. At least one of the plurality of trenches has a different depth from one of the plurality of trenches adjacent thereto.