Trench Isolation for Semiconductor Substrate Contact
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Solution Overview
Problem
Conventional semiconductor components require significant lateral space due to diffusion-based isolation structures, which also complicate the formation of substrate contacts, leading to inefficient use of space and additional diffusion zones for contact connections.
Innovation Solution
The use of trench isolation structures that are filled with electrically conductive material, allowing for reduced lateral space requirements and integrating substrate contacts within the trenches, thereby eliminating the need for additional diffusion zones.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If diffusion-based isolation structures are used, then electrical insulation between functional units is achieved, but lateral space requirement is significantly enlarged
Solution Approach 1:
The patent combines the isolation function and substrate contact function into a single integrated structure. The isolation structure includes both the insulating layer and a conductive contact region that directly contacts the substrate, eliminating the need for separate diffusion zones for contacts. This merging reduces the lateral space requirement while maintaining electrical insulation between functional units.
Solution Approach 2:
The isolation structure serves multiple functions simultaneously: it provides electrical insulation between adjacent functional units through the insulating layer, and it provides substrate contact through the conductive region. This multi-functionality eliminates the need for additional separate structures, thereby reducing the overall lateral space requirement of the semiconductor component.
2Reliability
If diffusion process is used to produce isolation structures, then electrical insulation is achieved, but additional diffusion zones are required for contact connections
Solution Approach 1:
The patent merges the isolation structure and substrate contact into a single integrated formation process. The isolation structure includes both the insulating layer and conductive contact region that are formed together, eliminating the need for separate diffusion zones and reducing structural complexity.
Solution Approach 2:
The patent extracts the contact function from the traditional diffusion-based isolation process and integrates it directly into the isolation structure. By forming the conductive contact region as part of the isolation structure itself, the need for additional separate contact diffusion zones is eliminated, simplifying the overall device structure.
3Reliability
If conventional isolation structures are used, then electrical insulation is provided, but substrate contacts require additional diffusion zones
Solution Approach 1:
The patent combines the isolation function and substrate contact function into a single integrated structure. The isolation structure includes both the insulating layer and a conductive contact region that directly contacts the substrate, eliminating the need for separate diffusion zones for contacts. This merging reduces the lateral space requirement while maintaining electrical insulation between functional units.
Solution Approach 2:
The isolation structure serves multiple functions simultaneously: it provides electrical insulation between adjacent functional units through the insulating layer, and it provides substrate contact through the conductive region. This multi-functionality eliminates the need for additional separate structures, thereby reducing the overall lateral space requirement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the lateral space requirement of semiconductor components by utilizing trench isolation structures for both electrical insulation and substrate contact, enhancing the efficiency of semiconductor design and production.
Implementation Method 1
the two dopant regions are caused to melt by means of a heat treatment process, that is to say that the vertical extents of the dopant regions are enlarged until the latter vertically overlap one another
Data Source
AI summary
A method for producing a semiconductor component with a semiconductor body includes providing a substrate of a first conductivity type. A buried semiconductor layer of a second conductivity type is provided on the substrate. A functional unit semiconductor layer is provided on the buried semiconductor layer. At least one trench, which reaches into the substrate, is formed in the semiconductor body. An insulating layer is formed, which covers inner walls of the trench and electrically insulates the trench interior from the functional unit semiconductor layer and the buried semiconductor layer, the insulating layer having at least one opening in the region of the trench bottom. The at least one trench is filled with an electrically conductive semiconductor material of the first conductivity type, wherein the electrically conductive semiconductor material forms an electrical contact from a surface of the semiconductor body to the substrate.