Trench Semiconductor Layer Stack With Tuned Step Coverage
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Solution Overview
Problem
Current low-pressure chemical vapor deposition processes struggle to accurately and stably control step coverage, which is essential for meeting electrical requirements in semiconductor manufacturing without altering the properties of the layers.
Innovation Solution
A semiconductor structure and manufacturing method involving a substrate with a trench, where a first layer with lower step coverage is formed using low-pressure chemical vapor deposition, followed by a second layer with higher step coverage formed through atomic layer deposition, allowing for precise control of step coverage and maintaining or repairing surface defects to achieve desired electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If low pressure chemical vapor deposition process is used to reduce step coverage, then step coverage is reduced, but control accuracy and stability of step coverage deteriorates
Solution Approach 1:
The patent segments the layer formation process into multiple sequential deposition steps with different process parameters. The first layer is deposited with parameters optimized for low step coverage, while subsequent layers are deposited with parameters optimized for high step coverage, allowing independent control of each layer's step coverage characteristics
Solution Approach 2:
The patent applies different deposition conditions to different layers based on their specific requirements. Each layer can have tailored step coverage properties by adjusting deposition parameters such as pressure, temperature, and gas flow rates specific to that layer's electrical requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of a multi-layer structure with improved step coverage, ensuring the semiconductor structure meets electrical requirements while maintaining the properties of the layers, thereby enhancing the reliability and performance of the semiconductor device.
Implementation Method 1
the low pressure chemical vapor deposition process (LPCVD) can achieve lower step coverage
Implementation Method 2
a second layer with higher step coverage formed through atomic layer deposition
Data Source
AI summary
The embodiment of the present invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises: a substrate having a trench therein; a first layer covering the bottom and the sidewall of the trench; and a second layer covering the surface of the first layer, wherein the step coverage of the second layer is different from the step coverage of the first layer. The embodiment of the invention is conducive to obtaining a multi-layer structure with preset step coverage.