Trench Semiconductor Layout for Low Contact Resistance
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Solution Overview
Problem
Conventional semiconductor devices with a large number of contact regions reduce the exposed area of the source region on the semiconductor substrate, leading to increased contact resistance and uneven electric field concentration near the trenches when turned off.
Innovation Solution
The semiconductor device features trenches with a gate insulating film and gate electrode, where overlapping ranges of inter-trench semiconductor regions and electric field relaxation regions are alternately arranged, allowing holes to flow from bottom regions to contact regions via electric field relaxation regions, stabilizing the potential and reducing electric field concentration, while maintaining a wide source region area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a large number of contact regions are provided, then the potential distribution is improved, but the exposed area of the source region is reduced and contact resistance increases
Solution Approach 1:
The patent applies local quality by creating different regions with distinct functions: contact regions are localized at specific positions to manage potential distribution, while the source region maintains sufficient exposed area for low contact resistance. The electric field relaxation regions are selectively positioned between the trenches to address potential uniformity without compromising source region integrity.
2Stability of the object's composition
If a large number of contact regions are provided, then the potential distribution is improved, but the source region area is reduced
Solution Approach 1:
The patent segments the semiconductor device structure into distinct functional zones: multiple contact regions are segmented and positioned at intervals, electric field relaxation regions are segmented between the trenches, and the source region is preserved as a continuous exposed area. This segmentation allows each region to perform its specific function without interfering with others.
Solution Approach 2:
The patent resolves the area conflict by utilizing vertical dimensionality - the electric field relaxation regions are positioned between the trenches in the vertical structure, allowing potential distribution control without horizontally encroaching on the source region area. This dimensional arrangement enables both contact regions and source region to coexist with adequate area.
3Stability of the object's composition
If contact regions are increased, then potential stability is improved, but electric field concentration becomes uneven near trenches
Solution Approach 1:
The electric field relaxation regions serve as intermediary elements positioned between the trenches. These regions mediate the electric field distribution by providing a transition zone that prevents direct concentration of electric field lines at the trench edges, thereby stabilizing the potential distribution while maintaining uniform electric field characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration balances the spread of the depletion layer, restricts electric field concentration, and reduces contact resistance by ensuring a stable low potential in the bottom regions and a wider source region area.
Implementation Method 1
allowing holes to flow from bottom regions to contact regions via electric field relaxation regions
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, trenches extending in a first direction and arranged at intervals in a second direction intersecting the first direction, a gate insulating film, and a gate electrode. The semiconductor substrate includes a source region, a body region, a drift region, bottom regions, electric field relaxation regions, and contact regions. There are overlapping ranges in which each of inter-trench semiconductor regions and each of the electric field relaxation regions overlap each other, the overlapping ranges include contact overlapping ranges in which the contact regions are disposed and non-contact overlapping ranges in which the contact regions are not disposed, and the contact overlapping ranges and the non-contact overlapping ranges are alternately arranged in the first direction.