Trench Liner Fuse Structure for Sub-15 Nm IC Integration
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Solution Overview
Problem
The fabrication of fuses becomes challenging as interconnect dimensions scale down, making it difficult to create fuse features with sub-15 nm spacing due to lithography limitations, and conventional fuse structures are bulky, occupying valuable space in integrated circuit design.
Innovation Solution
The proposed trench liner fuse structure is integrated between two trench liners, allowing for fuse integration in tight spaces. This structure includes a first and second conductive line, metal pillars extending vertically from these lines, and a conductive link connecting the pillars, where the materials and metals used are distinct from each other.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional fuse structures are used, then the fuse can be programmed to activate redundancy or customize chip design, but the fuse structure becomes bulky and occupies valuable space in integrated circuit design
Solution Approach 1:
The fuse structure transitions from a planar configuration to a three-dimensional vertical structure. Multiple conductive lines (first, second, third, and fourth conductive lines) are arranged vertically at different levels, connected through via structures. This vertical stacking enables the fuse to occupy less lateral area while maintaining the necessary conductive paths for programming functionality.
Solution Approach 2:
The fuse structure employs nested arrangements where conductive lines and via structures are positioned within and around each other. The first and second conductive lines are positioned adjacent to each other, with via structures connecting them vertically. This nesting allows multiple functional elements to share the same lateral footprint, reducing the overall area occupied by the fuse structure.
2Productivity
If interconnect dimensions are scaled down, then more circuit elements can be integrated, but creating fuse features with sub-15 nm spacing becomes difficult due to lithography limitations
Solution Approach 1:
The fuse structure is segmented into multiple discrete conductive lines (first, second, third, and fourth conductive lines) separated by insulating materials. This segmentation allows each conductive line to be formed with relaxed spacing requirements, as they are not required to be in direct contact. The via structures further segment the connection paths, enabling formation through multiple lithography steps with larger individual feature sizes while achieving fine effective spacing.
Solution Approach 2:
Via structures serve as intermediary elements connecting the conductive lines vertically. These via structures bridge the gaps between conductive lines that are spaced apart by insulating materials, enabling electrical connection without requiring the conductive lines to be in direct contact. This intermediary approach allows the use of larger lithography features while achieving the functional equivalent of sub-15 nm spacing through the vertical connection path.
Data Source
AI summary
A fuse structure including a first conductive line and a second conductive line, a first metal pillar extending vertically from a top surface of the first conductive line and a second metal pillar extending vertically from a top surface of the second conductive line, a conductive link electrically connecting a top surface of the first metal pillar with a top surface of the second metal pillar, where both the first conductive line and the second conductive line are a different material than both the first metal pillar and the second metal pillar, and where both the first metal pillar and the second metal pillar are a different metal than the conductive link.