High Density Micro-Electrode Array Using Trench Substrates
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Solution Overview
Problem
Current multi-electrode arrays have electrode densities that are significantly lower than the density of neurons, limiting their effectiveness in applications such as neural interfacing and brain activity studies.
Innovation Solution
A high density micro-electrode array is developed with a transistor layer and substrate featuring tightly packed electrodes, each connected to access transistors, and separated by distances less than one micron, utilizing techniques like trench formation and buried oxide layers to achieve higher electrode densities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If standard CMOS metallization techniques are used to fabricate multi-electrode arrays, then the manufacturing process is simple and reliable, but the electrode density is limited to approximately one hundred to ten thousand electrodes per square millimeter
Solution Approach 1:
The substrate is divided into multiple trenches, with electrodes formed within each trench. This segmentation allows electrodes to be positioned in three-dimensional space rather than on a flat surface, significantly increasing the number of electrodes that can be packed into a given area while maintaining manufacturability through standard semiconductor processing techniques
Solution Approach 2:
The invention transitions from two-dimensional planar electrode arrangement to three-dimensional positioning by forming electrodes within trenches etched into the substrate. This vertical dimension enables much higher electrode density without proportionally increasing fabrication complexity, as the trench formation and electrode deposition can be integrated into existing CMOS processing flows
2Quantity of substance
If electrode spacing is reduced to increase density, then electrode density increases, but manufacturing precision requirements increase significantly
Solution Approach 1:
Trenches are formed in the substrate before electrodes are deposited, establishing precise spatial boundaries that guide electrode positioning. This preliminary structuring ensures that even when electrodes are spaced less than one micron apart, their positions are controlled by the pre-formed trench geometry rather than requiring ultra-precise deposition alignment
Solution Approach 2:
The trench structure acts as an intermediary element between the substrate and the electrodes. It provides mechanical support, defines precise positioning, and enables tight electrode spacing without directly requiring the deposition process to achieve sub-micron precision, thereby reducing the overall manufacturing precision requirements
Data Source
AI summary
A high density micro-electrode array includes a transistor layer including a plurality of access transistors and a substrate in operable communication with the transistor layer including, wherein at least a portion of the substrate includes a plurality of trenches. The system includes a plurality of electrodes at least partially located in the plurality of trenches, wherein each of the plurality of electrodes is connected to at least one of the plurality of access transistors and wherein each of the electrodes is separated by a distance less than approximately one microns.