Trench PN Diode Integration for On-Chip Temperature Sensing
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Solution Overview
Problem
Existing semiconductor devices lack efficient integration of temperature sensors, particularly integrated PN diodes, which are crucial for accurate temperature monitoring and control in semiconductor operations.
Innovation Solution
The integration of a temperature-sensitive PN diode within the semiconductor device, utilizing a MOS gate structure and trench portions to enhance temperature sensitivity and accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a temperature sensor is integrated into the semiconductor device, then temperature monitoring capability is improved, but device complexity increases
Solution Approach 1:
The patent integrates a temperature sensor into the semiconductor device by merging the sensor structure with existing device components. The sensor is formed within the semiconductor substrate using the same fabrication processes, combining temperature sensing functionality with the device structure to avoid adding separate external sensing components.
Solution Approach 2:
The semiconductor device structure serves multiple functions: it provides the primary device operation and simultaneously acts as the temperature sensor. The same semiconductor substrate and doping structures that form the device also create the temperature-sensitive characteristics, allowing the device to perform both its primary function and temperature monitoring.
2Measurement precision
If PN diode integration is implemented, then temperature sensitivity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent forms the doping structures that create the temperature-sensitive PN diode characteristics during the preliminary fabrication stages, before final device assembly. The doping regions are created using standard fabrication processes with built-in precision controls, establishing the temperature sensing properties early in the manufacturing sequence.
Solution Approach 2:
The patent achieves temperature sensitivity by controlling doping concentration parameters and junction depth parameters during fabrication. By precisely controlling these parameters through standard doping processes, the temperature-sensitive characteristics are established without requiring exceptional manufacturing precision beyond normal fabrication capabilities.
3Measurement precision
If MOS gate structure is used for temperature sensing, then temperature accuracy is improved, but device complexity increases
Solution Approach 1:
The patent combines the MOS gate structure with the temperature sensing function by forming the gate oxide and gate electrode over the temperature-sensitive doping regions. The same MOS gate structure that controls device operation also serves as the temperature sensing element, eliminating the need for separate temperature sensing components.
Solution Approach 2:
The MOS gate structure performs dual functions: it provides gate control for device operation and simultaneously acts as the temperature sensor. The gate oxide thickness and gate electrode properties are optimized to provide both electrical control and temperature-sensitive characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise temperature monitoring and control, improving the operational efficiency and reliability of semiconductor devices by providing real-time temperature feedback.
Implementation Method 1
a temperature sensor including a PN diode
Data Source
AI summary
Provided is a semiconductor device including: an active portion; and a temperature sensitive portion, in which the temperature sensitive portion includes a temperature sensitive trench portion which is provided on a front surface side of a semiconductor substrate, a temperature sensitive anode region which is provided inside a trench of the temperature sensitive trench portion, and a temperature sensitive cathode region which is provided in contact with the temperature sensitive anode region inside the trench of the temperature sensitive trench portion.