Trench Polymer Cross-Linking for Residue-Free Semiconductor Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor device manufacturing lies in effectively separating integrated elements with ultra-miniaturization techniques as pitch sizes decrease, requiring advanced separation methods to maintain high integration and quality while minimizing costs.
Innovation Solution
A semiconductor device manufacturing method involving the formation of a first polymer layer that is decomposed or cross-linked differently on various surfaces through a heat treatment process, utilizing a polyurea layer that reacts with hydrogen ions generated on certain layers to form a thin second polymer layer, thereby selectively modifying the trench surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a polymer layer is formed to fill narrow trenches for element separation, then the separation precision is improved, but material residue remains on the trench surfaces
Solution Approach 1:
The patent applies different thermal treatments to different portions of the polymer layer based on their location. The first portion in contact with the first layer undergoes decomposition, while the second portion in contact with the second layer undergoes cross-linking. This spatial differentiation of material properties resolves the contradiction by allowing complete removal of polymer from surfaces where residue is harmful while maintaining polymer integrity where it provides beneficial separation.
Solution Approach 2:
The patent changes the physical and chemical parameters of the polymer layer through controlled heat treatment. By adjusting temperature and treatment conditions, the polymer transitions from a fill material to either decomposed residues (for removal) or cross-linked structures (for retention). This parameter transformation enables the same material to serve opposite functions in different locations, resolving the residue problem while maintaining separation precision.
2Loss of substance
If heat treatment is applied to decompose polymer on certain surfaces, then residue-free surfaces are achieved, but the polymer structure is damaged
Solution Approach 1:
The patent segments the polymer layer into functionally distinct portions based on their contact surfaces. The first portion contacting the first layer is designated for decomposition and complete removal, while the second portion contacting the second layer is designated for cross-linking and structural retention. This segmentation allows differential thermal treatment that simultaneously achieves residue-free surfaces where needed and preserves polymer integrity where separation functionality is required.
3Productivity
If conventional separation techniques are used as pitch size decreases, then integration density is improved, but separation effectiveness deteriorates
Solution Approach 1:
The patent employs parameter changes by utilizing thermal energy to induce different chemical reactions (decomposition vs. cross-linking) in the polymer layer. This thermal parameter control enables precise manipulation of polymer properties at the nanoscale, achieving effective separation in ultra-narrow trenches that conventional techniques cannot handle while maintaining high integration density through miniaturization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for precise and residue-free formation of a thin second polymer layer within narrow trenches, enhancing the reliability of semiconductor devices by ensuring selective processing and minimizing material residue.
Implementation Method 1
when the heat treatment process is performed, the first portion of the first polymer layer is decomposed
Implementation Method 2
when the heat treatment process is performed, the second portion of the first polymer layer is cross-linked to form the second polymer layer
Implementation Method 3
when the heat treatment process is performed, the gap fill insulating layer generates hydrogen ions
Data Source
AI summary
A semiconductor device manufacturing method includes providing a first layer having a first surface, providing a second layer including a trench that exposes the first surface, onto the first layer, forming a first polymer layer that fills the trench, and performing a heat treatment process on the first polymer layer to form a second polymer layer. A second surface of the second layer is exposed by the trench, the first polymer layer includes a first portion being in contact with the first surface, and a second portion being in contact with the second surface, when the heat treatment process is performed, the first portion of the first polymer layer is decomposed, when the heat treatment process is performed, the second portion of the first polymer layer is cross-linked to form the second polymer layer, and physical properties of the first layer are different from physical properties of the second layer.