Trench Semiconductor Process Tuned to Substrate Carbon Concentration
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Solution Overview
Problem
Existing methods for manufacturing semiconductor devices do not account for variations in carbon concentration in semiconductor substrates, leading to fluctuations in device characteristics.
Innovation Solution
A method involving the formation of trench structures and insulated gate electrodes in semiconductor substrates, with adjustments to the base region or collector region's preparation conditions based on the carbon concentration to stabilize device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor substrates are used with varying carbon concentrations, then manufacturing cost and ease of manufacture are maintained, but device characteristics show significant variation and reliability decreases
Solution Approach 1:
The patent applies parameter changes by adjusting ion implantation conditions (dose, energy, species) and annealing parameters based on the carbon concentration of the substrate. This allows the manufacturing process to adapt to substrate variations, maintaining device characteristics stability without requiring strict substrate specification control
Solution Approach 2:
The patent implements feedback control by measuring or knowing the carbon concentration of each substrate and using this information to adjust subsequent processing parameters. This closed-loop approach compensates for substrate variations and ensures consistent device performance across different substrates
2Manufacturing precision
If ion implantation and annealing are performed without carbon concentration consideration, then manufacturing process simplicity is maintained, but device characteristics such as collector-emitter saturation voltage and turn-off loss show significant variation
Solution Approach 1:
The patent changes processing parameters including ion implantation dose, energy, and annealing temperature based on substrate carbon concentration. This systematic parameter adjustment compensates for material variations and achieves precise control over device characteristics despite increased processing complexity
Solution Approach 2:
The patent performs preliminary characterization of substrate carbon concentration before device fabrication, allowing processing parameters to be pre-adjusted for each substrate. This preliminary action enables subsequent precise control of device characteristics without real-time complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively stabilizes the characteristics of semiconductor devices by adjusting ion implantation doses and voltages, reducing variations in collector-emitter saturation voltage and turn-off loss, thereby enhancing device reliability.
Implementation Method 1
a preparation condition for at least either the base region or the second main electrode region is adjusted depending on a carbon concentration in the semiconductor substrate
Data Source
AI summary
A method of manufacturing the semiconductor device including: forming a trench from a top surface side of a semiconductor substrate of a first conductivity-type; burying an insulated gate electrode structure in the trench; forming a base region of a second conductivity-type at an upper part of the semiconductor substrate so as to be in contact with the trench; forming a first main electrode region of the first conductivity-type at an upper part of the base region so as to be in contact with the trench; and forming a second main electrode region of the second conductivity-type on a bottom surface side of the semiconductor substrate, where a preparation condition for at least either the base region or the second main electrode region are adjusted depending on a carbon concentration in the semiconductor substrate.