Trench Resistor Structure for Smaller Semiconductor Footprints
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Solution Overview
Problem
Conventional semiconductor structures have an excessively large area occupied by resistor structures, which hinders device miniaturization.
Innovation Solution
A semiconductor structure is designed with a conductive layer located on both the bottom and sidewall of a trench, configured as a resistor structure, and filled with a second dielectric layer, increasing the equivalent conductive sectional area while reducing the transverse area occupied.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the resistor structure is formed as a sheet structure or rectangular structure on the surface, then the structure is simple to manufacture, but the transverse area occupied is excessively large
Solution Approach 1:
The resistor structure transitions from a two-dimensional sheet/rectangular configuration to a three-dimensional structure by depositing conductive material on both the bottom surface and sidewalls of a trench. This vertical expansion into the third dimension increases the effective conductive area without proportionally increasing the transverse footprint, thereby reducing the area occupied on the substrate surface while maintaining or enhancing resistive functionality.
Solution Approach 2:
The conductive layer is nested within the trench structure, utilizing the vertical space inside the trench rather than expanding horizontally. The sidewall deposition effectively uses the internal surface area of the trench, similar to how nested dolls occupy space within each other, maximizing the use of available volume while minimizing external footprint.
2Ease of manufacture
If the resistor structure uses a conventional sheet structure, then the manufacturing process is simple, but the equivalent conductive sectional area is insufficient
Solution Approach 1:
By forming the conductive layer on both the bottom and sidewalls of the trench, the structure utilizes vertical space to increase the equivalent conductive sectional area. This three-dimensional configuration provides more conductive material cross-section for current flow compared to a planar sheet of the same footprint, effectively increasing the quantity of conductive substance without complicating the manufacturing process excessively.
Solution Approach 2:
The conductive material is strategically placed in specific locations - on the bottom surface and along the sidewalls of the trench - where it contributes most effectively to the resistive function. This localized deposition optimizes the distribution of conductive material to maximize the equivalent sectional area in regions that contribute to current flow, rather than uniformly distributing material across a large area.
Data Source
AI summary
Semiconductor structures and methods for forming the same are provided. In one form, a semiconductor structure includes: a substrate; a first dielectric layer, located on the substrate; a trench, located in the first dielectric layer; a conductive layer, located on a bottom and a sidewall of the trench and configured as a resistor structure; and a second dielectric layer, configured to be filled in the trench where the conductive layer is formed. By means of embodiments and implementations of the present disclosure, an equivalent conductive sectional area of the resistor structure is increased, and a transverse area occupied by the resistor structure is reduced, thereby miniaturizing the device.