Trench-Isolated Semiconductor Structure to Prevent Floating States
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Solution Overview
Problem
Semiconductor devices face issues due to charging and electrical separation problems in semiconductor elements, leading to reliability concerns and potential floating states, which can affect performance and image quality.
Innovation Solution
A semiconductor device design with a trench separating semiconductor regions, using conductive paths in insulating layers to electrically connect regions and prevent floating states, enhancing moisture resistance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a trench is used to electrically separate semiconductor regions, then electrical separation is improved, but the risk of floating states increases
Solution Approach 1:
An insulating film is introduced as an intermediary material filling the trench between semiconductor regions of different conductivity types. This insulating film prevents direct electrical contact between opposite polarity regions, eliminating the formation of parasitic junctions and floating states while maintaining the electrical separation function of the trench.
2Reliability
If semiconductor regions are electrically separated by a trench, then electrical isolation is improved, but moisture resistance deteriorates
Solution Approach 1:
The trench structure is filled with an insulating film material that provides both electrical insulation properties and moisture barrier properties. This composite approach combines the electrical isolation function with moisture protection, creating a multi-functional structure that addresses both technical requirements simultaneously.
3Reliability
If conductive paths are added to connect separated regions, then electrical connectivity is improved, but device complexity increases
Solution Approach 1:
The insulating film in the trench serves multiple functions: it provides electrical insulation between opposite polarity regions, prevents floating states, blocks moisture penetration, and eliminates the need for separate conductive connection structures. This multi-functional design reduces overall device complexity while maintaining electrical connectivity through the semiconductor substrate itself.
Data Source
AI summary
A semiconductor device that includes a semiconductor layer including first and second surfaces, a first insulator arranged on the first surface and a second insulator arranged on the second surface is provided. The semiconductor layer includes first and second portions which are electrically separated in the semiconductor layer by a trench. The first portion includes a first region of a first conductivity type at the first surface and a second region of a second conductivity type at the second surface. The second portion includes a third region of the first conductivity type at the first surface and a fourth region of the second conductivity type at the second main surface. A first conductive path connected the first and third regions is arranged in the first insulator and a second conductive path connected the second and fourth regions is arranged in the second insulator.