Semiconductor device and method for manufacturing semiconductor device
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices face challenges in optimizing the doping concentration distribution to enhance breakdown voltage and reduce noise during switching operations, particularly in the regions surrounding the gate trench portions.
Innovation Solution
The introduction of a high resistance region with a lower doping concentration than the lower end region, strategically placed between the well region and the lower end region, helps in reducing potential differences and improving electrical resistance, thereby enhancing breakdown voltage and reducing noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If the doping concentration is increased in the lower end region to reduce noise, then the noise reduction is achieved, but the breakdown voltage decreases
Solution Approach 1:
The patent applies local quality by creating distinct doping concentration zones within the lower end region. Specifically, it introduces a first doping concentration in a first region and a second doping concentration in a second region, where the doping concentrations are locally optimized to achieve both noise reduction and maintain breakdown voltage. This spatial variation in doping quality allows simultaneous optimization of conflicting performance parameters.
2Reliability
If the doping concentration distribution is optimized to increase breakdown voltage, then the breakdown voltage is enhanced, but noise during switching operations increases
Solution Approach 1:
The patent segments the lower end region into multiple sub-regions with different doping concentrations. By dividing the region and assigning different doping levels (first doping concentration in first region, second doping concentration in second region), it creates a graded structure that manages both breakdown voltage and noise characteristics independently in different zones, thus resolving the contradiction between these two parameters.
3Reliability
If a high resistance region with lower doping concentration is added between the well region and lower end region, then the breakdown voltage is enhanced and noise is reduced, but the device complexity increases
Solution Approach 1:
The patent changes the doping concentration parameter by introducing a high resistance region with a third doping concentration that is lower than both the first and second doping concentrations. This parameter modification creates an intermediate zone that provides both electrical isolation and noise filtering, achieving enhanced breakdown voltage and noise reduction while managing the complexity through systematic parameter variation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively increases the breakdown voltage and reduces noise by controlling the doping concentration distribution, specifically in the high resistance region, which connects the well region and the lower end region, thereby improving the semiconductor device's performance.
Implementation Method 1
strategically placed between the well region and the lower end region, helps in reducing potential differences and improving electrical resistance, thereby enhancing breakdown voltage
Implementation Method 2
The introduction of a high resistance region with a lower doping concentration than the lower end region, strategically placed between the well region and the lower end region
Data Source
AI summary
Provided is a semiconductor device comprising: a semiconductor substrate including a drift region of a first conductivity type; a base region of a second conductivity type provided between the drift region and the upper surface of the semiconductor substrate; a plurality of trench portions provided from the upper surface of the semiconductor substrate to below the base region; a lower end region of the second conductivity type provided in contact with lower ends of two or more trench portions; a well region of the second conductivity type which is provided from the upper surface of the semiconductor substrate to below the base region, and has a higher doping concentration than the base region; and a high resistance region of the second conductivity type which is arranged between the lower end region and the well region in the top view and has a lower doping concentration than the lower end region.