Trench Termination Layout for Compact Bidirectional Transistors
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Solution Overview
Problem
Conventional transistor devices with separate control terminal and field plate structures require more area and have higher on-resistance when configured in a back-to-back configuration, limiting their efficiency in bidirectional voltage blocking applications.
Innovation Solution
A transistor device with a conductive structure that serves as both a control terminal and a field plate, positioned at different lateral distances from the trench sidewall with dielectric in between, allowing for a simplified and more compact design that optimizes dielectric spacing and electric field dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate control terminal and field plate structures are used in conventional transistor devices, then the device can provide voltage blocking capability, but the device occupies more area and has higher on-resistance
Solution Approach 1:
The patent combines the control terminal and field plate into a single integrated structure. The gate electrode serves dual functions: as a control terminal for transistor operation and as a field plate for voltage blocking. This merging eliminates the need for separate structures, reducing device area while maintaining voltage blocking capability through the shared gate structure
Solution Approach 2:
The gate structure is designed to perform multiple functions simultaneously. It acts as both the control terminal for switching operation and as a field plate for voltage blocking in reverse polarity conditions. This multi-functionality reduces the total number of components needed while achieving both transistor control and protection functions
2Reliability
If separate control terminal and field plate structures are used in conventional transistor devices, then the device can provide voltage blocking capability, but the device has higher on-resistance
Solution Approach 1:
By merging the control terminal and field plate into a single gate structure, the patent reduces the total resistance path. The integrated structure eliminates additional contact resistances and reduces the number of interfaces between separate components, thereby lowering on-resistance while maintaining voltage blocking through the same gate electrode
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces the on-resistance and area requirements, enabling efficient bidirectional voltage blocking with improved breakdown voltage performance, suitable for applications like reverse auto battery protection.
Implementation Method 1
with dielectric located in between
Data Source
AI summary
A transistor device includes a substrate, a first current-carrying region having a first lateral width, and a second current-carrying region. A first trench is formed between the first current-carrying region and the second current-carrying region. The first trench includes a first vertical component sidewall coupled to the first current-carrying region and a second vertical component sidewall coupled to the second current-carrying region. A first termination region includes a first termination portion coupled to the first current-carrying region, a second termination portion coupled to the second current-carrying region, and a first trench termination portion coupled to the first trench. The first trench and the first trench termination portion surround a portion of the first current-carrying region, and the second current-carrying region and the second termination portion surrounds a portion of the first trench and the first trench termination portion. A width of the first termination portion exceeds the first lateral width.