Trench Textured Semiconductor Photovoltaic Devices
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor photovoltaic devices have limited conversion efficiency, which is a critical performance index for solar cells, as they struggle to effectively convert solar energy into electrical energy with minimal loss.
Innovation Solution
The semiconductor photovoltaic device features a semiconductor substrate with trenches and a textured structure, including pyramids, along with dopant regions and conductive layers, which are fabricated using etching and deposition processes to enhance light absorption and electrical output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional semiconductor photovoltaic devices are used, then manufacturing is simpler, but conversion efficiency is limited
Solution Approach 1:
The semiconductor substrate is segmented by forming multiple trenches that divide the surface into distinct regions. These trenches create separate functional zones including light-trapping structures and dopant regions, allowing optimized light absorption and charge carrier collection in different areas simultaneously
Solution Approach 2:
The invention transitions from a conventional planar surface to a three-dimensional textured structure with pyramids and trenches. This dimensional change increases the effective surface area for light absorption and creates multiple interfaces for improving optical trapping and electrical performance
2Use of energy by moving object
If a textured structure with pyramids and trenches is formed, then light absorption is optimized, but manufacturing complexity increases
Solution Approach 1:
The textured structure with pyramids is formed as a preliminary step before trench etching and dopant deposition. This pre-formed texture serves as a foundation that guides subsequent processing steps and enables the final device structure to achieve optimal light-trapping performance
Solution Approach 2:
The manufacturing process utilizes parameter changes in the etching steps to create different structures. By adjusting etching depth, pattern density, and dopant concentration parameters, the process transforms a simple substrate into a complex textured structure with optimized optical and electrical properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves the conversion efficiency of solar cells by optimizing light absorption and electrical generation, reducing reflectivity and increasing the ratio of electric output to incident light.
Implementation Method 1
a textured structure over the semiconductor substrate, the textured structure including a plurality of pyramids, a plurality of trenches extending into the semiconductor substrate, each the trenches being between at least two adjacent pyramids
Implementation Method 2
optimizing light absorption and electrical generation, reducing reflectivity and increasing the ratio of electric output to incident light
Implementation Method 3
a p-n junction between a p-type semiconductor and an n-type semiconductor. In the solar cell, electron-hole pairs are energized by photon. The generated electrons and holes may respectively move toward the p-type and n-type semiconductors, and then accumulate in separate contacts. When light is incident on the solar cell, an electrical current may be generated
Data Source
AI summary
A semiconductor photovoltaic device comprises a semiconductor substrate having a first surface and a second surface, the first surface and the second surface being opposed to each other, a plurality of trenches extending into the semiconductor substrate from the first surface, the first surface being a substantially planar surface, a dopant region in the semiconductor substrate near the first surface and the plurality of trenches, a first conductive layer over the semiconductor substrate, and a second conductive layer on the second surface of the semiconductor substrate.