Trench Transistors With Shielded Trench Components
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Solution Overview
Problem
Existing electronic devices with field-effect transistors face challenges in effectively managing high voltages and temperature control, particularly in maintaining a stable electrostatic potential around additional electronic components like diodes or resistors, which can be disrupted by the operational states of transistors.
Innovation Solution
The design integrates additional electronic components, such as diodes or resistors, within semiconductor trenches parallel to transistor trenches, with conductive and insulating layers to maintain a constant electrostatic potential, using shared manufacturing steps to reduce distance and enhance temperature detection accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If additional electronic components are placed close to transistors for temperature sensing, then temperature detection accuracy is improved, but the electrostatic potential around the additional components becomes unstable due to transistor operational states
Solution Approach 1:
The patent introduces a dedicated conductive element and insulating layers as intermediary structures between the additional electronic component and the transistor. The conductive element in the second trench acts as a shield that maintains a constant electrostatic potential around the additional component, while the insulating layers isolate this conductive element from both the transistor and the additional component, preventing potential disruption while enabling close proximity for accurate temperature sensing.
2Strength
If transistors are used to block high voltages, then voltage blocking capability is improved, but temperature management and control become more difficult
Solution Approach 1:
The patent implements a feedback mechanism where additional electronic components (such as temperature sensors) are positioned close to the transistors to continuously monitor temperature. This temperature information is fed back to control circuits that can then adjust transistor operation or activate cooling mechanisms, enabling dynamic temperature management for high-voltage blocking transistors.
Solution Approach 2:
The patent replaces mechanical or physical separation methods with an electrostatic field-based solution using conductive elements and insulating layers. Instead of physically isolating temperature sensors from transistors, the invention uses electric field management through conductive shields and insulating barriers to enable both close proximity for sensing and electrical isolation for stability.
3Measurement precision
If the distance between additional electronic components and transistors is decreased, then temperature sensing accuracy is improved, but manufacturing complexity increases
Solution Approach 1:
The patent merges the fabrication processes for the additional electronic components and the transistors by forming both structures within the same semiconductor substrate using integrated trench formation and filling techniques. The first and second trenches are created and filled in a coordinated manner, allowing additional components to be positioned close to transistors while using shared manufacturing steps to reduce overall process complexity.
Data Source
AI summary
The present description concerns an electronic device comprising a semiconductor substrate, transistors having their gates contained in first trenches extending in the substrate, and at least one electronic component, different from a transistor, at least partly formed in a first semiconductor region contained in a second trench extending in the semiconductor substrate parallel to the first trenches.