Trenched Semiconductor Structure With Integrated Implant Mask Alignment
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Solution Overview
Problem
Existing semiconductor device manufacturing processes are complex and costly due to the need for multiple ion implantation masks for forming different active device layers, which increases fabrication complexity and costs.
Innovation Solution
The use of an integrated ion implantation mask for forming multiple active device layers, such as the JFET, well, and source regions, in a semiconductor device, which simplifies the manufacturing process and reduces costs by eliminating the need for additional masks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple ion implantation masks are used for forming different active device layers, then the device structure can be formed with proper alignment, but the fabrication complexity and costs increase
Solution Approach 1:
The patent combines multiple ion implantation masks into a single integrated mask structure. The mask includes first, second, and third implantation masks formed at different locations, allowing simultaneous or sequential implantation of dopants for JFET, well, and source regions through one unified structure, thereby reducing process complexity while maintaining alignment precision
Solution Approach 2:
The integrated mask structure serves multiple functions: it defines implantation regions for different active device layers (JFET, well, source), provides alignment references, and enables selective dopant introduction. This multi-functional design eliminates the need for separate masks for each implantation step, reducing fabrication complexity
2Manufacturing precision
If multiple ion implantation masks are used for forming different active device layers, then proper doping regions can be created, but the fabrication costs increase
Solution Approach 1:
The patent merges multiple discrete mask fabrication and alignment steps into a single integrated mask structure, reducing the number of process steps, material consumption, and alignment operations required. This directly lowers fabrication costs while maintaining precise doping region formation
Solution Approach 2:
The integrated mask structure performs multiple doping region definition functions simultaneously, eliminating the need for separate mask procurement, fabrication, and alignment for each doping step, thereby reducing overall manufacturing costs
3Reliability
If gate fingers are buried in trenches within the semiconductor layer structure, then enhanced device performance is achieved, but the manufacturing process becomes more complicated
Solution Approach 1:
The patent performs preliminary formation of the integrated mask structure and active device layers (JFET, well, source) before trench formation and gate finger insertion. This sequencing allows the mask to guide subsequent processing steps, simplifying the overall manufacturing process while achieving the performance benefits of buried gate structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces fabrication costs and complexity while integrating seamlessly with existing processes, allowing for the efficient production of vertical semiconductor devices with improved performance.
Implementation Method 1
The use of an integrated ion implantation mask for forming multiple active device layers, such as the JFET, well, and source regions
Data Source
AI summary
A semiconductor device includes a semiconductor layer structure comprising a junction field-effect transistor (JFET) region of a first conductivity type, a well region of a second conductivity type on the JFET region, a source region of the first conductivity type on the well region and a plurality of support shields of the second conductivity type. The support shields are spaced apart from one another in a first direction parallel to an upper surface of the semiconductor layer structure and extend through the source region, the well region and the JFET region. The semiconductor device further includes a trenched gate structure formed in the semiconductor layer structure between a pair of adjacent support shields. Edges of at least two of the JFET region, the well region and the source region are aligned in a second direction perpendicular to the first direction.