Tri-state buffer test pad for stacked semiconductor bump reliability

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

In stacked semiconductor devices, direct contact with bump electrodes for testing can cause connection failures due to needle marks, and using test pads increases the load capacity of bump electrodes, which is undesirable for high-speed operations.

Innovation Solution

Incorporating a tri-state buffer coupled between the penetrating electrode and the test pad, controlled by a buffer control signal, allows for testing without direct probing of bump electrodes, minimizing load capacity and preventing connection failures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a tester probe is directly applied to the bump electrode for testing, then testing can be performed, but needle marks are left on the bump electrode causing connection failure

Engineering Contradiction:
Improveconnection reliabilityVSAvoidtesting accessibility
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The patent introduces a test pad as an intermediary element between the tester probe and the bump electrode. The test pad is formed on the semiconductor chip surface and electrically connected to the bump electrode through a penetrating electrode. During testing, the probe contacts the test pad instead of directly contacting the bump electrode, thus avoiding needle marks while maintaining electrical connection for testing purposes.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If a test pad is used to test stacked memory chips, then direct contact with bump electrodes is avoided, but the pad capacity is superimposed on the pin capacity of the bump electrode

Engineering Contradiction:
Improveconnection integrityVSAvoidsignal transmission speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The patent segments the electrical connection path into distinct functional sections: the bump electrode for high-speed signal transmission, the penetrating electrode for vertical connection through the chip, and the test pad for testing operations. By separating the test function from the signal transmission function, the bump electrode maintains its optimized characteristics for high-speed operation while the test pad provides a dedicated interface for testing without affecting the signal path.

Inventive Principle:
Principle #1Segmentation

3Adaptability or versatility

If the stacked memory chip part and memory controller are prepared separately by different manufacturers, then manufacturing flexibility is improved, but assembly complexity increases

Engineering Contradiction:
Improvemanufacturing flexibilityVSAvoidassembly complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent employs a standardized bump electrode interface that serves multiple functions: it acts as a test point during chip testing through the test pad connection, and simultaneously serves as the interconnection interface when stacking the memory chip with the memory controller. This universal interface design allows the same structural elements to fulfill both testing and interconnection requirements, simplifying the overall assembly process despite multi-manufacturer production.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS9230619B2Semiconductor device
Publication Date: 2016.01.05 LONGITUDE LICENSING LTD
  • US9230619B2 patent drawing
  • US9230619B2 patent drawing
  • US9230619B2 patent drawing

AI summary

A device includes a semiconductor substrate, a first penetrating electrode penetrating through the semiconductor substrate, a first test pad, and a first tri-state buffer coupled between the first penetrating electrode and the first test pad. The first tri-state buffer receives a buffer control signal at a control terminal thereof. The device further includes a buffer control circuit supplying the buffer control signal to the first tri-state buffer.