Tri-state Magnetic Memory with Hall Sensor
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Solution Overview
Problem
Current memory technologies, such as MOS and CMOS, require constant refreshing due to capacitor leakage, are expensive, and have low memory density, especially in portable devices, and existing ferromagnetic memory systems need separate sensing circuits, which increase complexity and cost.
Innovation Solution
A non-volatile tri-state memory device with a permanent magnetic bit that can be selectively altered between three magnetic states using a write module with independently operable coils and a read module with a Hall effect sensor, allowing for the same circuitry to sense and write the magnetic state, reducing the need for additional sensing circuits and increasing memory density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If ferromagnetic memory uses separate sensing circuits to detect magnetic polarity, then measurement precision is improved, but device complexity increases and manufacturing cost increases
Solution Approach 1:
The patent combines the sensing function and write function into a single circuit element. The sense/write line serves dual purposes: it detects magnetic polarity during read operations and directs magnetic field during write operations. This eliminates the need for separate sensing circuits, reducing device complexity while maintaining measurement precision through the same magnetic field interaction mechanism.
Solution Approach 2:
The sense/write line is designed to perform multiple functions: sensing magnetic polarity, writing magnetic states, and providing electrical connection. This multi-functional approach reduces the number of circuit elements needed, simplifying the overall device structure while maintaining the ability to accurately detect and manipulate magnetic states.
2Measurement precision
If ferromagnetic memory uses separate sensing circuits, then measurement precision is improved, but manufacturing cost increases
Solution Approach 1:
By merging the sensing and write functions into a single sense/write line, the patent reduces the number of fabrication steps and materials required. The same conductive path is used for both reading and writing operations, eliminating the need to fabricate separate sensing circuits and reducing overall manufacturing complexity and cost.
Solution Approach 2:
The multi-functional sense/write line reduces the total component count, which directly lowers manufacturing costs. The same line structure serves multiple purposes, reducing material usage, fabrication steps, and assembly complexity while maintaining the precision needed for magnetic polarity detection.
3Measurement precision
If separate sensing circuitry is added to ferromagnetic memory, then measurement precision is improved, but memory density decreases
Solution Approach 1:
The patent merges the sensing function with the existing write circuitry, eliminating the need for additional sensing components in each memory cell. This integration allows more memory cells to be packed into the same area, increasing memory density while maintaining the capability to accurately detect magnetic polarity through the shared sense/write line.
4Speed
If MOS or CMOS memory is used, then speed is improved, but power consumption increases due to constant refreshing
Solution Approach 1:
The ferromagnetic memory cells possess inherent non-volatility, allowing them to retain magnetic states without external power or refreshing operations. The magnetic domains maintain their orientation spontaneously, eliminating the continuous power consumption associated with capacitor refreshing in MOS/CMOS memory while maintaining fast access speeds through direct magnetic field interaction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The tri-state memory device provides increased memory storage capacity, reduces power consumption, and simplifies manufacturing, enabling more efficient and cost-effective storage compared to binary memory systems.
Implementation Method 1
a read module with a Hall effect sensor, allowing for the same circuitry to sense and write the magnetic state
Implementation Method 2
a write module with independently operable coils and a read module with a Hall effect sensor
Data Source
AI summary
A non-volatile tri-state random access memory device, including a permanent magnetic bit; a write module in functional communication with the permanent magnetic bit and configured to selectably alter the permanent magnetic bit between three magnetic states, a write module including a write coil disposed about the permanent magnetic bit and in communication with a source of electrical power; and a read module in functional communication with the permanent magnetic bit and configured to observe and communicate each of three magnetic states of the permanent magnetic bit, the read module including a read sensor coupled to a read return line.