Triangular LED Electrode Layout for Uniform Current Spreading

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Solution Overview

Problem

The existing light-emitting elements with semiconductor layers of a triangular shape in a top plan view face challenges in achieving uniform current distribution, leading to lopsided emission patterns.

Innovation Solution

The design incorporates a semiconductor stack with a triangular shape, featuring a first and second electrode with specific extensions and connecting portions to efficiently diffuse current across the semiconductor stack, improving emission distribution by optimizing the layout and material selection of the electrodes and light-transmissive conductive layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a triangular-shaped semiconductor layer is used, then the device structure is simplified and manufacturing is easier, but the current distribution becomes lopsided and emission uniformity deteriorates

Engineering Contradiction:
Improveease of manufactureVSAvoidemission distribution uniformity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies local quality by making the electrode extensions have different lengths tailored to the specific triangular geometry. The first electrode extension has length L1 and the second has length L2, where these lengths are specifically designed to compensate for the asymmetric current distribution inherent in triangular semiconductor structures. This localized adjustment of electrode dimensions addresses the uniformity problem without changing the overall triangular shape that provides manufacturing simplicity.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If electrode extensions are added to connect portions, then current diffusion is improved, but device complexity increases

Engineering Contradiction:
Improvecurrent distribution uniformityVSAvoiddevice complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent resolves the contradiction by extending electrodes in the planar dimension rather than adding vertical complexity. The first and second electrodes are extended in opposite directions along the third side of the triangle, utilizing the two-dimensional plane to achieve current diffusion without stacking additional layers or creating three-dimensional structures. This dimensional approach improves current distribution while maintaining relatively simple device architecture.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces lopsided current distribution and enhances emission uniformity, resulting in improved light-emitting performance.

Implementation Method 1

a first electrode provided on the first semiconductor layer and including a first connecting portion and a first extension extending from the first connecting portion; and a second electrode provided on the second semiconductor layer and including a second connecting portion and a second extension extending from the second connecting portion

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS12068436B2Light-emitting element
Publication Date: 2024.08.20 NICHIA CORP
  • US12068436B2 patent drawing
  • US12068436B2 patent drawing
  • US12068436B2 patent drawing

AI summary

A light-emitting element includes: a semiconductor stack having a triangular shape in a top plan view, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first and seconds semiconductor layers; a first electrode located on the first semiconductor layer and including a first connecting portion and a first extension extending from the first connecting portion; and a second electrode located on the second semiconductor layer and including a second connecting portion and a second extension extending from the second connecting portion. The first extension includes a first portion extending from the first connecting portion toward the second connecting portion. The second extension includes a second portion including a portion extending along a first side, a third portion including a portion extending along a second side, and fourth and fifth portions each including a portion extending along a third side.