Heteroleptic Triazenide Metal Complexes for Low-Temperature CVD
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Solution Overview
Problem
Existing metal complexes used as precursors in chemical vapor deposition processes for semiconductor production are contaminated by carbon, leading to impure layers, require high temperatures, and have low volatility, which is inefficient and costly.
Innovation Solution
Development of heteroleptic metal complexes with a nitrogen-containing triazenide ligand, such as [(EtCp)2Sc(tBu-N3-tBu)], which are synthesized in situ without isolation, ensuring high purity and volatility, allowing for efficient deposition at lower temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If homoleptic Ln (III) triazenide complexes are used as precursors, then carbon contamination is reduced, but molecular weight increases to more than 600 g/mol resulting in low volatility
Solution Approach 1:
The complex is divided into different ligand types (cyclopentadienide and triazenide) with different functions. The cyclopentadienide ligand provides volatility and appropriate molecular weight, while the triazenide ligand provides the carbon-free nitrogen source. This segmentation allows each ligand to contribute its advantageous properties to the overall complex performance.
Solution Approach 2:
The patent creates a composite ligand system combining cyclopentadienide and triazenide ligands in a heteroleptic complex. This composite approach integrates the volatility benefits of cyclopentadienide ligands with the carbon-free decomposition characteristics of triazenide ligands, achieving both low carbon contamination and appropriate volatility simultaneously.
2Object-affected harmful factors
If high molecular weight complexes are used, then carbon contamination decreases, but vapour pressure decreases requiring high temperatures for deposition
Solution Approach 1:
The complex is divided into different ligand types (cyclopentadienide and triazenide) with different functions. The cyclopentadienide ligand provides volatility and appropriate molecular weight, while the triazenide ligand provides the carbon-free nitrogen source. This segmentation allows each ligand to contribute its advantageous properties to the overall complex performance.
Solution Approach 2:
The patent creates a composite ligand system combining cyclopentadienide and triazenide ligands in a heteroleptic complex. This composite approach integrates the volatility benefits of cyclopentadienide ligands with the carbon-free decomposition characteristics of triazenide ligands, achieving both low carbon contamination and appropriate volatility simultaneously.
3Manufacturing precision
If high temperatures are used for deposition, then layer quality improves, but energy consumption increases and parasitic impurities increase
Solution Approach 1:
The patent changes the chemical composition parameters of the precursor complex by using a heteroleptic design with specific cyclopentadienide and triazenide ligands. This compositional change modifies the decomposition behavior to occur at lower temperatures, thereby reducing energy consumption and parasitic impurity formation while still achieving high layer quality through controlled low-temperature deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The complexes provide high-purity, high-volatility precursors that enable high-quality metal layers with reduced carbon incorporation, improving process efficiency and reducing environmental impact.
Implementation Method 1
Another subject matter of the invention is a metal complex which is vaporisable without decomposition
Implementation Method 2
or sublimable without decomposition
Data Source
AI summary
The invention relates to metal complexes according to the formula [M(LC)(LT)(LZ)]. Thereby applies: M=scandium, yttrium, lanthanide or titanium; LC=unsubstituted, monoalkyl-substituted or polyalkyl-substituted cyclopentadienide anion; LT=triazenide anion (R1-N3-R2)-, wherein R1 and R2 are independently of each another a linear alkyl group with 1 to 10 carbon atoms or a branched alkyl group with 3 to 10 carbon atoms; LZ is a) independently of LC selected from the group mentioned for LC, or b) independently of LT selected from the group mentioned for LT. Subject matter of the invention is, in addition, the use of at least one such metal complex for producing a layer consisting of at least one metal M or containing at least one metal M on a surface of a substrate as well as for producing an electronic component.