Silicon Oxide Film Formation Using Trichlorosilane Pyrolysis
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in forming high-quality silicon oxide films with low hydrogen and chlorine concentrations, as impurities like hydrogen and chlorine can introduce defects and affect the reliability of semiconductor devices.
Innovation Solution
A method involving the use of a hydrogenated chlorosilane precursor gas, such as trichlorosilane, is supplied to the substrate under conditions where it is pyrolyzed and confined in the process chamber, followed by oxidation with an ozone reactant to form a silicon oxide film, effectively reducing hydrogen and chlorine concentrations and improving film quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a precursor containing hydrogen and halogen element is supplied to form a film, then the film formation process can proceed, but hydrogen and chlorine impurities are introduced into the film
Solution Approach 1:
The film formation process is divided into multiple cycles, each consisting of a precursor supply period and a reactant supply period. This segmentation allows separate control of impurity introduction and purification phases, enabling the precursor to be supplied in controlled amounts followed by complete removal through subsequent reactant supply and exhaust processes.
Solution Approach 2:
The patent employs periodic alternation between precursor supply and reactant supply phases. During the precursor supply period, hydrogenated chlorosilane is introduced and pyrolyzed. During the reactant supply period, ozone is supplied to oxidize the precursor and the system exhausts the chamber. This periodic action repeats for multiple cycles, progressively reducing impurity concentration while building up the desired film.
2Productivity
If the precursor is pyrolyzed in the process chamber, then film formation occurs, but the precursor may not be completely exhausted leading to impurity accumulation
Solution Approach 1:
The patent supplies the reactant (ozone) immediately after the precursor supply period begins, rather than waiting for the precursor to be completely exhausted. This preliminary action of reactant supply starts the oxidation and exhaust process early, ensuring that any remaining precursor and decomposition products are completely removed before the next precursor supply cycle begins.
Solution Approach 2:
The patent maintains continuous operation by immediately transitioning from precursor supply to reactant supply without idle time. The exhaust process continues throughout the reactant supply period, ensuring continuous removal of impurities. This continuous action prevents impurity accumulation while maintaining high film formation productivity.
3Manufacturing precision
If multiple cycles are performed to reduce impurity concentration, then film quality improves, but processing time increases
Solution Approach 1:
The patent performs a predetermined number of cycles (typically 3-10 cycles) rather than attempting to achieve complete impurity removal in a single extended process. Each cycle supplies precursor and reactant for predetermined periods, providing partial action that progressively reduces impurities to acceptable levels without excessive time investment.
Solution Approach 2:
The patent optimizes processing parameters including precursor supply flow rate, reactant supply flow rate, chamber pressure, and temperature for each cycle. By carefully controlling these parameters, the system achieves efficient impurity removal and high-quality film formation within a reasonable number of cycles, balancing quality requirements with processing time constraints.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in high-quality silicon oxide films with reduced impurity concentrations, enhancing the reliability and characteristics of semiconductor devices by minimizing the introduction of hydrogen and chlorine impurities during the film formation process.
Implementation Method 1
forming a first layer by supplying a precursor containing hydrogen and an halogen element to the substrate in a process chamber, under a condition in which the precursor is pyrolyzed
Implementation Method 2
forming a second layer by supplying a reactant to the substrate in the process chamber thereby modifying the first layer
Data Source
AI summary
There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing forming a first layer by supplying a precursor containing hydrogen and an halogen element to the substrate in a process chamber, under a condition in which the precursor is pyrolyzed if the precursor exists alone and under a condition in which a flow rate of the precursor supplied into the process chamber is larger than a flow rate of the precursor exhausted from an interior of the process chamber and forming a second layer by supplying a reactant to the substrate in the process chamber thereby modifying the first layer.