Trim Photomask Data Processing for Phase Shift Lithography
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Solution Overview
Problem
Conventional double exposure phase shift lithography methods face challenges in generating phase and trim photomasks independently, leading to design rule and lithography rule violations, which are not effectively addressed by existing techniques.
Innovation Solution
A method that simultaneously processes phase photomask and trim photomask data by combining initial data from drawn layers, inspecting for gaps, and processing them to optimize lithography, including filling appropriate gaps on both masks to ensure accurate pattern formation without compromising lithographic integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If phase and trim photomasks are generated independently using conventional double exposure methods, then the process can be simplified and infrastructure requirements are reduced, but design rule violations and lithography rule violations occur that compromise pattern accuracy
Solution Approach 1:
The patent combines the generation of phase photomask data and trim photomask data into a single simultaneous process. The system processes both mask types together from the same drawn layer data, identifying and resolving design rule violations and lithography rule violations in an integrated manner rather than independently, thereby maintaining pattern accuracy while simplifying the overall process.
Solution Approach 2:
The patent performs preliminary processing of both phase and trim photomask data simultaneously before the actual lithography exposure. By pre-identifying and correcting design rule violations and lithography rule violations in advance during the data processing stage, the system ensures accurate pattern formation without requiring separate correction steps later in the process.
2Manufacturing precision
If chrome regions are added to trim photomask to prevent unwanted exposure, then feature definition is improved, but gaps in the combined layer are created that affect lithography quality
Solution Approach 1:
The patent implements a feedback mechanism that continuously monitors the combined layer for gaps created by chrome regions in the trim photomask. When gaps are detected, the system automatically processes and corrects them by adjusting the photomask data, ensuring that the gaps do not compromise lithography quality while maintaining the feature definition benefits of chrome regions.
Solution Approach 2:
The patent changes the parameters of the photomask data by processing and adjusting gap sizes and positions in the combined layer. By modifying these parameters dynamically based on the detected gaps and their impact on lithography quality, the system optimizes both feature definition and lithography quality simultaneously.
3Reliability
If gap filling is performed on combined layer, then lithography quality is improved, but processing complexity increases
Solution Approach 1:
The patent segments the gap processing into distinct categories based on gap size, position, and impact on lithography quality. By dividing the processing task into segments (e.g., small gaps vs. large gaps, gaps in critical regions vs. non-critical regions), the system can apply appropriate processing rules to each segment, improving lithography quality while managing processing complexity through structured approach.
Data Source
AI summary
In accordance with the invention, there is a method of designing a lithography mask. The method can comprise generating initial phase photomask data and initial trim photomask data from a first set of data from a first drawn layer and/or layout and a second set of data from a second drawn layer, combining the initial phase photomask data with the first set of data to form a combined layer, inspecting for gaps in the combined layer, and processing the gaps in the combined layer.