Trimmed Gate Layout for Semiconductor Leakage Control
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Solution Overview
Problem
As semiconductor devices decrease in size, the spacing between electronic components decreases, leading to increased resistance to leakage current, which existing technologies have not effectively addressed.
Innovation Solution
The implementation of a trimmed-gates region in semiconductor devices, where additional cut-patterns are used to eliminate the extension of gate electrodes at flyover intersections, creating larger gaps that reduce intra/inter layer 'ON' state gate leakage by preventing the gate electrodes from extending into gaps, thereby increasing the resistance to leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gate electrodes extend into gaps at flyover intersections, then device area is reduced and routing is simplified, but leakage current increases between neighboring structures
Solution Approach 1:
The gate electrode is segmented into two distinct portions: a first portion that extends into the gap at the flyover intersection and a second portion that is trimmed back and does not extend into the gap. This segmentation allows the gate electrode to provide both routing continuity and leakage prevention, resolving the contradiction between area utilization and leakage current reduction.
Solution Approach 2:
Different portions of the gate electrode are given different properties: the first portion is designed to extend into the gap for routing purposes, while the second portion is trimmed back to prevent leakage. This local differentiation allows each portion to fulfill its specific function optimally, addressing both the area utilization and leakage current concerns.
2Volume of moving object
If spacing between electronic components is decreased to reduce device size, then device area is reduced, but resistance to leakage current decreases
Solution Approach 1:
The gate electrode structure is segmented to create different spacing characteristics: the trimmed second portion creates larger effective gaps that maintain high resistance to leakage current, while the overall device footprint is reduced through compact routing. This allows small device size without sacrificing leakage resistance.
Solution Approach 2:
The gate electrode geometry is modified by trimming the second portion, which changes the effective gap dimensions. This parameter change creates larger gaps at critical locations, increasing resistance to leakage current while maintaining compact overall device dimensions.
Data Source
AI summary
A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and for each active region, a portion of each of some but not all of the gate structures (gate extension) extending partially into the gap; and when viewing the gate structures as a group, the group having a notched profile relative to the second direction, where notches in the notched profile correspond to ones of the gate structures which are substantially free of extending into the gap.