Triode Field Emission Display With Anode and Gate on Same Substrate
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Solution Overview
Problem
Current triode field emission display (FED) technologies face challenges in simple and low-voltage fabrication, uniform electron emission, and high cross-talk between pixels due to complex fabrication processes and contamination of field emission materials, particularly in the placement and protection of gate and cathode structures.
Innovation Solution
A triode FED design where the anode and gate are fabricated on the same substrate, with the cathode on a separate substrate, using strip-like conducting layers and dielectric layers for protection and isolation, allowing for parallel alignment and reducing the need for a dielectric layer between the gate and cathode, thus simplifying fabrication and reducing contamination and electron dispersion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the gate and cathode are fabricated on the same substrate (planar gate structure), then the fabrication process is simple and can be done at one time, but the electron dispersion is serious and beam spots are large
Solution Approach 1:
The invention divides the device into two separate substrates: the first substrate contains the gate electrode, while the second substrate contains the cathode and anode. This segmentation allows each substrate to be optimized independently, preventing electron dispersion while maintaining fabrication simplicity through parallel processing of separate components.
Solution Approach 2:
The invention transitions from a planar two-dimensional arrangement (gate and cathode on the same substrate) to a three-dimensional stacked configuration where the cathode substrate is positioned above the gate substrate with a controlled gap. This vertical arrangement reduces electron dispersion and improves beam focus while maintaining fabrication efficiency.
2Ease of operation
If the gate is fabricated before the cathode (normal gate structure), then low voltage regulation is easy, but the fabrication process is complex and high cost due to multiple dielectric layers
Solution Approach 1:
By separating the gate and cathode onto different substrates, the invention eliminates the need for multiple dielectric layers and complex alignment processes. Each substrate can be fabricated independently using simpler processes, reducing overall device complexity while maintaining low-voltage operation capability.
Solution Approach 2:
The gate electrode is prepared on the first substrate in advance, and the cathode is prepared on the second substrate separately. The two substrates are then assembled with a predetermined gap, eliminating the need for complex in-situ dielectric layer formation and reducing fabrication steps.
3Ease of manufacture
If the gate is placed underneath the cathode (under gate structure), then the fabrication process is relative simple, but the electron dispersion is serious and cross-talk between neighbor pixels is serious
Solution Approach 1:
The invention positions the cathode substrate vertically above the gate substrate with a controlled gap distance, creating a three-dimensional arrangement. This vertical configuration confines electron emission more effectively, reducing lateral electron dispersion and cross-talk between adjacent pixels while maintaining fabrication simplicity.
Solution Approach 2:
The invention optimizes the local electric field distribution by controlling the gap distance between the gate and cathode substrates. This localized field enhancement improves electron emission control and reduces unwanted electron dispersion to neighboring regions, minimizing cross-talk.
4Object-generated harmful factors
If the distance between anode and cathode is decreased to reduce cross-talk, then cross-talk is reduced, but the anode voltage must be increased and luminescence efficiency is low
Solution Approach 1:
The invention enhances the local electric field strength by optimizing the gap distance between the gate and cathode substrates. This localized field enhancement improves electron emission control and reduces cross-talk without requiring high anode voltages, maintaining luminescence efficiency.
Solution Approach 2:
The gate electrode acts as an intermediary that controls and focuses electron emission from the cathode. By properly positioning the gate relative to the cathode, the invention achieves effective electron beam control and cross-talk reduction without the need to decrease the anode-cathode distance or increase anode voltage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the uniformity and stability of electron emission, reduces cross-talk between pixels, and allows for low-voltage control, improving the overall image display quality and fabrication reliability of the FED.
Implementation Method 1
The triode FED uses gate to control the field emission of cathode
Implementation Method 2
uses gate to control the field emission of cathode, while not the high voltage as for the diode FED
Implementation Method 3
anode conducting layer 018, phosphor layer 017 is arranged on the anode conducting layer 018
Data Source
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AI summary
The present invention relates to a triode-structured field emission display with anode and gate on the same substrate, comprising the anode-gate substrate and cathode substrate, wherein a number of strip-like anode conducting layers are arranged on the anode-gate substrate, bus electrodes are arranged on each anode conducting layer, intertwined-like under-gate dielectric layer are arranged also on the anode-gate substrate, the longitudinal strips on the under-gate dielectric layer are parallel to anode conducting layer, followed by ordinal strip-like gate conducting layer and dielectric layer for gate protection, phosphor layer is arranged on the part of the anode-gate substrate that is not covered by the lateral branch strips; a number of strip-like cathode conducting layers are arranged alternating on the cathode substrate, resistor layer for current limiting and dielectric layer for cathode protection are arranged alternating on the cathode conducting layer, electron emission materials are arranged on the resistor layer for current limiting; the strip-like anode conducting layer and strip-like cathode conducting layer on the anode-gate substrate are perpendicular to the strip-like cathode conducting layer on the cathode substrate, dielectric layer for isolation is arranged between the anode-gate substrate and the cathode substrate. The field emission display presented in this invention is reasonable in structure design, simple in fabrication, moreover, the electron dispersion is little, and the image display quality is good.