Triple-Gate Semiconductor Structure for Lower Switching Loss
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Solution Overview
Problem
IGBTs face challenges in reducing turn-on loss while maintaining low on-voltage and short-circuit withstand capacity, as increasing channel density undesirably reduces short-circuit withstand capacity.
Innovation Solution
A semiconductor device with a triple-gate electrode structure, where the surface areas of the gate electrodes facing the semiconductor layers are arranged such that S1≤S2<S3, allowing independent control of each gate electrode to optimize electron injection and switching losses, with the third gate electrode switched off during the on period to ensure short-circuit withstand capacity and reduce turn-on loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If channel density is increased to reduce turn-off loss, then turn-off loss is reduced, but short-circuit withstand capacity is undesirably reduced
Solution Approach 1:
The gate electrode is divided into three separate gate electrodes (first, second, and third gate electrodes) that can be independently controlled. This segmentation allows different regions of the semiconductor device to be switched at different times, enabling reduced turn-off loss while maintaining short-circuit withstand capacity through coordinated gating sequences
2Loss of energy
If channel density is increased to reduce turn-on loss, then turn-on loss is reduced, but short-circuit withstand capacity is undesirably reduced
Solution Approach 1:
The gate electrode is divided into three separate gate electrodes (first, second, and third gate electrodes) that can be independently controlled. This segmentation allows different regions of the semiconductor device to be switched at different times, enabling reduced turn-on loss while maintaining short-circuit withstand capacity through coordinated gating sequences
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces switching losses at turn-on and turn-off by increasing electron injection efficiency and maintaining low saturation current, while ensuring short-circuit withstand capacity by strategically controlling the gate electrodes.
Implementation Method 1
first to third gate electrodes located between the semiconductor part and the first electrode, the first to third gate electrodes facing the first to third semiconductor layers and being electrically isolated from each other
Data Source
AI summary
S1≤S2<S3 being satisfied, where S1 is a surface area of the first gate electrode and the third semiconductor layer facing each other via the first insulating film, S2 is a surface area of the second gate electrode and the third semiconductor layer facing each other via the second insulating film, and S3 is a surface area of the third gate electrode and the third semiconductor layer facing each other via the third insulating film.