Triple-Layer Potting for Optoelectronic Semiconductor Components
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Solution Overview
Problem
Conventional semiconductor devices with potting materials face issues of gas permeability leading to conductor track corrosion and light instability, as silicone is gas permeable while epoxide is not light-stable, resulting in ageing-related degradation.
Innovation Solution
A triple-layer potting material system comprising a gas-impermeable epoxide layer as the first layer, a light-stable silicone layer with increased reflectivity as the second layer, and a highly transparent, light-stable silicone layer as the third layer, which differ in material composition, optical, and chemical properties, to encase the semiconductor chip and protect conductor tracks from corrosion and environmental radiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If silicone potting material is used, then light stability is improved, but gas tightness deteriorates
Solution Approach 1:
The patent applies composite materials by combining silicone and epoxide potting materials in a single encapsulation structure. The silicone layer provides light stability and UV resistance, while the epoxide layer provides gas tightness. This composite approach allows the device to simultaneously achieve both light stability and gas protection, resolving the contradiction between these two properties.
Solution Approach 2:
The patent segments the potting material into distinct layers with different material compositions. The first layer (silicone) is optimized for light stability, while the second layer (epoxide) is optimized for gas tightness. This segmentation allows each layer to perform its specific function independently, resolving the contradiction by distributing different protective functions across separate material layers.
2Object-affected harmful factors
If epoxide potting material is used, then gas tightness is improved, but light stability deteriorates
Solution Approach 1:
The patent uses composite materials where the epoxide layer is combined with a silicone layer. The epoxide provides the necessary gas tightness to prevent harmful gases from reaching the semiconductor chip, while the adjacent silicone layer protects against UV degradation and yellowing. This composite structure resolves the contradiction by assigning different protective functions to different material layers.
Solution Approach 2:
The patent segments the encapsulation into functional layers: an epoxide layer for gas barrier properties and a silicone layer for light stability. This segmentation allows the device to achieve both gas tightness and light stability simultaneously, with each layer optimized for its specific protective function.
3Device complexity
If single-layer potting material is used, then device complexity is reduced, but protective function deteriorates
Solution Approach 1:
The patent segments the potting material into multiple layers, each with specific protective functions. The first layer protects against gas penetration, while the second layer protects against light degradation. This segmentation increases protection effectiveness while maintaining relatively simple device structure, resolving the contradiction between complexity and protective function.
Solution Approach 2:
The patent employs composite potting materials with distinct functional layers. The multi-material structure provides enhanced protection against both gas and light hazards, achieving superior reliability while keeping the overall device structure manageable. The composite approach allows simultaneous optimization of multiple protective properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The triple-layer potting material system effectively prevents gas penetration and corrosion while maintaining light stability, enhancing the ageing resistance and radiation efficiency of the semiconductor device by combining the advantages of epoxide and silicone materials.
Implementation Method 1
the first potting layer facing the carrier substrate is an epoxide layer and is formed as a gas barrier
Implementation Method 2
a light-stable silicone layer with increased reflectivity as the second layer
Data Source
AI summary
An optoelectronic semiconductor device including a carrier substrate and at least one semiconductor chip arranged thereon, wherein the semiconductor chip includes an active layer that generates radiation, conductor tracks electrically contacting the semiconductor chip arranged on the carrier substrate, the semiconductor chip is enclosed in a potting material, and the potting material includes at least a first potting layer, a second potting layer and a third potting layer, which differ from one another in at least one of: their material composition, their optical properties and their chemical properties.