Triple Patterning Method for Variable Pattern Dimensions
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Solution Overview
Problem
The existing triple patterning method is limited in its ability to form patterns with different sizes and adjacent pattern distances on various regions of a substrate, which restricts its application in meeting the diverse needs of semiconductor manufacturing and increases production costs.
Innovation Solution
A modified triple patterning method that involves forming a substrate with distinct regions, using multiple material layers and sidewall spacers to create core patterns, first patterns, and subsequent patterns with varying sizes and distances, allowing for the formation of triple patterns and fifth patterns with different dimensions on different substrate regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a conventional triple patterning method is used, then the process can form patterns on substrate, but it cannot form patterns with different sizes and adjacent pattern distances on various regions of the substrate
Solution Approach 1:
The patent applies local quality by forming different material layers (second material layer in first region, third material layer in second region) with different properties in different substrate regions. This allows the first region to produce triple patterns while the second region produces fifth patterns with different sizes and distances, enabling regional customization of pattern characteristics without increasing overall process complexity
Solution Approach 2:
The substrate is segmented into multiple regions (first region and second region) with different material layer configurations. The second material layer is formed only in the first region while the third material layer is formed only in the second region. This segmentation allows independent pattern formation in each region, enabling different pattern geometries and spacing requirements to be met simultaneously
2Adaptability or versatility
If existing triple patterning methods are used, then patterns can be formed, but production costs increase due to inability to meet diverse manufacturing needs
Solution Approach 1:
The patent creates a universal patterning process that can produce multiple types of patterns (triple patterns and fifth patterns with different sizes and distances) using a single integrated method. By forming different material layers in different regions and performing selective etching, the process eliminates the need for multiple separate production lines or additional processing steps, thereby reducing production costs while maintaining flexibility to meet diverse semiconductor manufacturing requirements
Data Source
AI summary
A triple patterning method is provided. The method includes providing a substrate having a first region and a second region; and forming a first material layer. The method also includes forming a second material layer; and forming a plurality of core patterns on the second material layer in the first region. Further, the method includes forming sidewall spacers on side surfaces of the core patterns; and forming first patterns on the first material layer. Further, the method includes forming a third material layer on the first material layer and the first patterns; and forming second patterns on the third material layer in the first region and third patterns on the third material layer in the second region. Further, the method also includes forming fourth patterns; and forming triple patterns on the substrate in the first region and fifth patterns on the substrate in the second region.