Triple Via Chain for Memory Interconnect Testing

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing memory sub-systems face challenges in accurately detecting cracks, misalignments, and disconnections in advanced interconnects due to the limitations of single via chains, which can lead to incomplete testing of fabrication processes, especially in compact and high-density memory devices like 3D flash NAND memory.

Innovation Solution

Implementing a triple via chain system, where three independent via chains are used in each layer of the memory device, allowing for more comprehensive testing by transmitting signals across each chain to detect errors and stress points, thereby enhancing the accuracy of fabrication quality checks.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single via chain is used for testing, then the device complexity is reduced, but the measurement precision and reliability of interconnect testing deteriorates

Engineering Contradiction:
Improvevia chain structureVSAvoiddetection accuracy of cracks and misalignments
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The patent divides the testing system into three independent via chains instead of using a single via chain. Each via chain can independently test different aspects of the interconnect structure, allowing for more precise detection of cracks, misalignments, and disconnections while maintaining manageable device complexity through modular segmentation

Inventive Principle:
Principle #1Segmentation

2Ease of manufacture

If a single via chain is used for testing, then the manufacturing process is simpler, but the reliability of fabrication quality checks deteriorates

Engineering Contradiction:
Improvefabrication process simplicityVSAvoidfabrication quality check reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The manufacturing testing process is segmented into three independent via chain tests, each targeting specific interconnect layers or failure modes. This segmentation enables comprehensive quality verification without requiring overly complex manufacturing processes, as each via chain can be manufactured and tested independently

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The via chains are incorporated into the fabrication process as preliminary test structures that enable quality checks before final device completion. This preliminary testing action allows for early detection of fabrication defects, improving overall quality reliability without adding significant manufacturing complexity

Inventive Principle:
Principle #10Preliminary action

3Reliability

If three independent via chains are implemented, then the reliability and measurement precision of interconnect testing improves, but the device complexity increases

Engineering Contradiction:
Improveinterconnect testing reliabilityVSAvoidvia chain system complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

By segmenting the testing function into three specialized via chains, each chain can be optimized for specific testing purposes while maintaining independent operation. This segmentation improves reliability through comprehensive coverage of interconnect defects while managing complexity through functional specialization and independence

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The three via chains collectively provide universal testing capability for various interconnect defects including cracks, misalignments, and disconnections. Each via chain serves multiple testing functions, allowing the system to achieve high reliability without proportionally increasing overall device complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20250014665A1Triple via chain for advanced interconnect in a memory device
Publication Date: 2025.01.09 MICRON TECHNOLOGY INC
  • US20250014665A1 patent drawing
  • US20250014665A1 patent drawing
  • US20250014665A1 patent drawing

AI summary

A memory device can include a first portion having a memory array comprising a plurality of memory cells and a first via chain segment for performing a test operation. The memory device can include a second portion comprising processing circuitry and a second via chain segment for performing the test operation. The memory device can also include an interconnect coupling the first portion and the second portion, the interconnect comprising a third via chain segment, wherein the first via chain segment, second via chain segment, and third via chain segment can be selected independently.