Triple Operation Voltage Device Layout Integration
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Solution Overview
Problem
Conventional triple operation voltage devices have limited layout area and integration due to the separation requirements for low voltage, middle voltage, and high voltage wells, which restrict further reduction in layout area and integration of integrated circuits.
Innovation Solution
The triple operation voltage device design includes a high voltage well separating low voltage and middle voltage wells, allowing for reduced space between them by eliminating the need for individual HV N-type wells, using a P-type or N-type substrate with buried layers and doped regions, and isolation structures like shallow trench isolation or local oxidation regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If individual HV N-type wells are used to separate LV and MV device wells, then leakage current is prevented, but layout area increases and integration is restricted
Solution Approach 1:
The patent merges the separation function into a single shared HV first type well that accommodates both LV and MV device wells, eliminating the need for separate HV N-type wells for each device type. This combining approach maintains leakage prevention while reducing the overall layout area.
Solution Approach 2:
The shared HV first type well serves multiple functions: it acts as the high voltage device well itself, and simultaneously functions as the isolation structure separating both LV and MV device wells from the substrate and from each other. This multi-functionality reduces the number of required structures.
2Reliability
If more isolation structures are added to prevent leakage, then device reliability improves, but device complexity increases
Solution Approach 1:
The shared HV first type well performs multiple isolation functions simultaneously - isolating LV devices, isolating MV devices, and providing the high voltage reference. This universal structure reduces overall device complexity compared to multiple separate isolation structures.
Data Source
AI summary
A triple operation voltage device including a first type substrate, a high voltage (HV) first type well, a second type well, a low voltage (LV) device well, and a middle voltage (MV) device well is provided. The HV first type well is disposed inside the first type substrate. The second type well is disposed inside the first type substrate to separate the HV first type well from the first type substrate. The LV device well and the MV device well are separately disposed inside the HV first type well by the separation of the HV first type well. The triple operation voltage device assists in reducing the space between the LV device well and the MV device well and improving the integration of integrated circuits.