Triple-Well Circuit Layout to Suppress Parasitic Diode Leakage
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Solution Overview
Problem
In integrated circuit devices with a triple well structure, setting the potential of N-type wells to high potential-side power supply voltages can lead to element breakdown or unexpected leak currents due to reverse voltages applied to parasitic diodes, increasing the complexity of circuit design and layout.
Innovation Solution
Supplying a first ground power supply voltage or a potential greater than or equal to the ground power supply voltage but less than the high potential-side power supply voltage to the N-type well, thereby avoiding element breakdown and leak currents by not applying reverse voltages to parasitic diodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the potential of the N-type well is set to a high potential-side power supply voltage, then the resistance of the N-type well is reduced, but element breakdown or unexpected leak currents occur due to reverse voltages applied to parasitic diodes
Solution Approach 1:
The patent changes the potential parameter of the N-type well from a high potential-side power supply voltage to a ground power supply voltage or a potential between ground and high potential-side power supply voltages. This parameter change eliminates reverse voltages applied to parasitic diodes, preventing element breakdown and unexpected leak currents while maintaining reduced resistance through appropriate potential selection.
2Reliability
If the potential of the N-type well is set to a high potential-side power supply voltage, then the resistance of the N-type well is reduced, but circuit design complexity increases
Solution Approach 1:
The patent simplifies circuit design by changing the potential parameter of the N-type well to ground power supply voltage or an intermediate potential, which eliminates the need for complex potential management and avoids reverse voltage issues with parasitic diodes, thereby reducing design complexity while maintaining reliability.
3Reliability
If the potential of the N-type well is set to a high potential-side power supply voltage, then the resistance of the N-type well is reduced, but heat generation increases
Solution Approach 1:
The patent reduces heat generation by changing the potential parameter of the N-type well to ground power supply voltage or an intermediate potential, which eliminates reverse voltages and prevents element breakdown. This parameter change maintains the resistance reduction benefit while avoiding excessive heat generation from voltage stress and current leakage.
Data Source
AI summary
A circuit device includes an N-type well on a P-type substrate, a P-type well provided in the N-type well, a circuit element provided in the P-type well, a P-type well provided in an N-type well, and a circuit element provided in the P-type well. A ground power supply voltage is supplied to a P-type well. A power supply voltage different from the ground power supply voltage is supplied to a P-type well. The ground power supply voltage or a first potential that is greater than or equal to the potential of the ground power supply voltage and less than the potential of a high potential-side power supply voltage is supplied to an N-type well.