True Random Number Generator With Dual-Energy Ion Implantation
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Solution Overview
Problem
Existing technologies face challenges in effectively utilizing physical unclonable functions to generate unique random codes for security applications, lacking sufficient randomness and security in generated codes.
Innovation Solution
A true random number generator employs memory cells manufactured through distinct ion implantation processes with varying energies to induce random interference characteristics, generating a random code with high randomness and uniqueness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion implantation process is used to manufacture memory cells, then manufacturing precision is improved, but randomness of generated codes deteriorates
Solution Approach 1:
The patent changes the implantation energy parameter from a fixed value to multiple distinct values (first implantation energy and second implantation energy). This parameter variation introduces manufacturing variations that create random interference characteristics in the memory cells, thereby improving the randomness of generated codes while maintaining manufacturing precision through controlled process variations.
2Reliability
If distinct ion implantation processes with varying energies are used, then randomness of generated codes is improved, but device complexity increases
Solution Approach 1:
The patent segments the ion implantation process into two distinct processes with different implantation energies. The first ion implantation process uses a first implantation energy to manufacture first memory cells, while the second ion implantation process uses a second implantation energy to manufacture second memory cells. This segmentation creates manufacturing variations that improve code randomness while keeping each individual process relatively simple.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method increases the probability of random induction of interference characteristics in memory cells, producing a random code suitable as a cryptographic key, enhancing system security.
Implementation Method 1
The first memory cells are manufactured through a first ion implantation process, and the second memory cells are manufactured through a second ion implantation process
Data Source
AI summary
A true random number generator and a true random number generating method thereof are provided. The true random number generator includes a random code generating device, a random code storage device, and a memory control circuit. The random code generating device includes multiple first memory cells and is configured to generate a random code. The random code storage device includes multiple second memory cells and is configured to receive and store the random code. The first memory cells are manufactured through a first ion implantation process, and the second memory cells are manufactured through a second ion implantation process. A first implantation energy used in the first ion implantation process is higher than a second implantation energy. used in the second ion implantation process.