Mono-Substituted TSA Precursors for Low-Temperature Thermal ALD
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Solution Overview
Problem
Current silicon-containing precursor technologies face limitations in achieving high deposition rates at low temperatures, particularly for substrates like plastic or Si substrates coated with organic films, and are not well-suited for thermal Atomic Layer Deposition (ALD) processes without plasma activation.
Innovation Solution
Development of mono-substituted trisilylamine (TSA) precursors with specific functional groups such as halogen atoms, isocyanato, amino, or alkoxy groups, which enable high surface reactivity and fast deposition rates in vapor deposition processes, including ALD, without the need for plasma activation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional silicon precursors are used for low temperature deposition, then deposition temperature can be reduced, but deposition rate becomes unacceptably slow
Solution Approach 1:
The patent modifies the chemical structure of silicon precursors by introducing highly reactive functional groups (chloro, bromo, iodo, alkoxy, amino) that change the reaction parameters, enabling fast deposition rates at low temperatures through enhanced surface reactivity without requiring plasma activation
Solution Approach 2:
The patent creates composite precursor molecules combining silicon centers with multiple types of reactive ligands (halogens, alkoxy groups, amino groups) that work synergistically to provide both low-temperature stability and high surface reactivity, achieving fast deposition without plasma
2Productivity
If plasma activation is used to achieve fast deposition rates, then deposition rate increases, but process complexity and equipment requirements increase
Solution Approach 1:
The patent extracts the plasma activation step from the deposition process by designing precursors with inherently high surface reactivity through reactive ligands (Cl, Br, I, OR, NR2 groups) that enable thermal ALD to achieve deposition rates previously only attainable with plasma, thereby simplifying the process
Solution Approach 2:
The patent replaces the plasma-based activation mechanism with a chemically-driven mechanism using highly reactive precursor ligands, substituting a complex plasma generation and control system with a simpler thermal decomposition and surface reaction process
3Productivity
If highly reactive precursors are used to achieve fast deposition, then deposition rate increases, but film quality and control precision may deteriorate
Solution Approach 1:
The patent applies different reactive ligands (Cl, Br, I, OR, NR2) at specific positions on the silicon precursor molecule, creating local variations in reactivity that enable controlled surface reactions while maintaining overall film quality and precise thickness control through self-limited ALD mechanisms
Solution Approach 2:
The patent employs periodic pulsing of precursor and reactant gases in sequential steps, allowing the highly reactive precursors to react in a controlled, self-limited manner during each cycle, maintaining film quality precision while achieving fast overall deposition rates
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of these mono-substituted TSA precursors allows for the deposition of silicon-containing films with enhanced reactivity and high growth rates at low temperatures, suitable for various applications including semiconductor manufacturing and OLED devices, while maintaining thermal stability and wide self-limited ALD windows.
Implementation Method 1
methods of using the same to deposit Si-containing films using vapor deposition processes
Implementation Method 2
vapor deposition processes, including ALD
Implementation Method 3
have a high surface reactivity
Implementation Method 4
maintaining a reasonable deposition rate to be of industrial interest
Data Source
AI summary
Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.