Through Silicon Trench Shielding for RF EMI Isolation
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Solution Overview
Problem
Current semiconductor devices with RF circuits face significant electromagnetic interference (EMI) issues, which affect the performance of surrounding circuits and are not adequately addressed by existing technologies.
Innovation Solution
A semiconductor device with a shielding structure that includes a substrate, an RF circuit, and a shielding through silicon trench (TST) or through silicon via (TSV) system, where the shielding structure is grounded and encompasses the RF circuit to prevent EMI, using conventional semiconductor manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If RF circuit is integrated into semiconductor device, then wireless communication capability is achieved, but electromagnetic interference is generated that affects other circuits
Solution Approach 1:
The patent divides the semiconductor device into functionally separated regions: an RF circuit region for wireless communication and other circuit regions for processing functions. A shielding structure physically segments these regions to prevent electromagnetic interference from the RF circuit from affecting other circuits, while maintaining the integrated benefits of the semiconductor device.
Solution Approach 2:
The patent introduces a shielding structure as an intermediary element between the RF circuit and other circuits. This shielding structure acts as a mediator that blocks electromagnetic fields, allowing both the RF circuit and other circuits to coexist in the same semiconductor device without interference.
2Object-generated harmful factors
If shielding structure is added to eliminate EMI, then electromagnetic interference is reduced, but device complexity increases
Solution Approach 1:
The shielding structure is designed to serve multiple functions: it provides electromagnetic shielding, defines circuit regions, and can be integrated with existing semiconductor manufacturing processes. By making the shielding structure multi-functional, the patent reduces the need for additional separate components, thereby limiting the increase in device complexity.
Solution Approach 2:
The patent optimizes the shielding structure's parameters such as material composition, thickness, and geometric configuration to achieve effective EMI shielding with minimal impact on device complexity. By carefully selecting and adjusting these parameters, the shielding structure provides maximum protection with the simplest possible design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively eliminates EMI from RF circuits, ensuring the performance of both the RF circuit and other nearby circuits, and can be integrated into various substrates including SOI substrates and package bodies.
Implementation Method 1
The shielding structure is disposed on the active surface and encompasses the RF circuit. The shielding structure is grounded. The shielding structure includes a shielding through silicon trench (TST) which does not penetrate through the substrate.
Data Source
AI summary
The present invention provides a semiconductor device with a shielding structure. The semiconductor device includes a substrate, an RF circuit, a shielding structure and an interconnection system. The substrate includes an active side and a back side. The RF circuit is disposed on the active side of the substrate. The shielding structure is disposed on the active side and encompasses the RF circuit. The shielding structure is grounded. The shielding structure includes a shielding TST which does not penetrate through the substrate. The interconnection system is disposed on the active side of the substrate. The interconnection system includes a connection unit providing a signal to the RF circuit.