TSV Barrier Layer Using Conductive 2D Materials for Skin Effect
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Solution Overview
Problem
In high-frequency signal transmission through TSV structures, the skin effect causes a decrease in transmission efficiency due to increased resistance as the current concentrates on the surface of the conductor, leading to deteriorated performance.
Innovation Solution
A semiconductor structure is developed with a via penetrating through a substrate, featuring a liner layer, a barrier layer made of conductive 2D materials like graphene or transition metal dichalcogenides, and a conductor, which replaces traditional Ta or TaN barrier layers to reduce resistance and enhance transmission efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If traditional conductor materials (Cu) are used in TSV for signal transmission, then the structure is simple and manufacturing is easy, but the transmission efficiency decreases significantly at high frequencies due to skin effect
Solution Approach 1:
The patent uses a composite structure consisting of a conductor (Cu) filled in a via, surrounded by a barrier layer made of conductive 2D material (such as graphene or transition metal dichalcogenides). This composite structure combines the high conductivity of Cu with the unique properties of 2D materials to reduce skin effect and improve high-frequency transmission efficiency while maintaining manufacturing feasibility
Solution Approach 2:
The patent changes the material parameter of the barrier layer from traditional insulating materials (Ta, TaN) to conductive 2D materials. This parameter change transforms the barrier layer into an active component that can carry current and reduce resistance, thereby improving transmission efficiency at high frequencies without complicating the manufacturing process
2Speed
If the frequency increases, then the signal transmission speed increases, but the conductive area decreases and current concentrates on the surface, increasing resistance
Solution Approach 1:
The patent converts the harmful skin effect into a beneficial structure by using conductive 2D materials in the barrier layer. Instead of treating the surface concentration of current as purely problematic, the design utilizes the high conductivity and unique electronic properties of 2D materials to manage and reduce the resistance caused by current concentration at high frequencies
Solution Approach 2:
The patent changes the electrical conductivity parameter of the barrier layer by using conductive 2D materials, which have superior electrical properties compared to traditional materials. This parameter change allows the barrier layer to actively participate in current conduction and reduce the overall resistance of the TSV structure at high frequencies
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of conductive 2D materials in the barrier layer decreases the resistance of the TSV structure, improving high-frequency transmission efficiency by reducing electron surface scattering and complementing the skin effect disadvantages, while also being critical as the TSV structure size shrinks.
Implementation Method 1
as the signal frequency increases, the transmission efficiency may decrease significantly due to skin effect. When the frequency increases, the conductive area through which a current pass decreases, and the current will more concentrate on a surface of the conductor. As such, the resistance of the conductor increases
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure comprises a substrate, a via, a liner layer, a barrier layer, and a conductor. The via penetrates through the substrate. The liner layer is formed on a sidewall of the via. The barrier layer is formed on the liner layer. The barrier layer comprises a conductive 2D material. The conductor fills a remaining space of the via.