TSV Air-Gap Structure for Noise and Thermal Stress Isolation
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Solution Overview
Problem
The noise coupling and thermal stress issues in through-silicon via (TSV) structures, particularly in high-density arrays, affect the electrical performance and stability of semiconductor devices.
Innovation Solution
Incorporating a protective barrier layer grounded through a metal layer and forming an electromagnetic shielding ring around the connecting structures, along with an air gap to isolate the structures from the substrate and dielectric layer, thereby reducing noise coupling and thermal stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If through-silicon via (TSV) structures are used to stack chips in three-dimensional integrated circuits, then interconnection capability and device complexity are improved, but noise coupling and thermal stress increase
Solution Approach 1:
An air gap is introduced as an intermediary between the TSV structure and the substrate/dielectric layer. This air gap acts as a mediator that electrically isolates the TSV from the substrate, thereby reducing noise coupling while maintaining the interconnection functionality of the TSV structure.
Solution Approach 2:
The continuous dielectric base layer is segmented by removing portions to form air gaps. This segmentation creates discrete isolated regions around the TSV structure, separating the conductive path from the substrate and reducing electromagnetic coupling and noise.
2Adaptability or versatility
If through-silicon via (TSV) structures are used to stack chips in three-dimensional integrated circuits, then interconnection capability is improved, but thermal stress increases
Solution Approach 1:
The air gap serves as a thermal isolation intermediary between the TSV structure and the substrate. By introducing this air gap, thermal stress generated during operation or processing is reduced, as the air gap provides thermal isolation and prevents stress transfer to the substrate.
3Object-affected harmful factors
If protective barrier layer and electromagnetic shielding ring are added around connecting structures, then noise coupling and thermal stress are reduced, but device complexity increases
Solution Approach 1:
The air gap structure serves multiple functions simultaneously: it provides electrical isolation to reduce noise coupling, acts as a thermal isolation layer to reduce thermal stress, and simplifies the overall structure compared to adding separate protective barrier layers and electromagnetic shielding rings. This multi-functionality reduces the need for additional complex protective structures.
Data Source
AI summary
A semiconductor structure includes: a base, including a substrate and a dielectric layer, the substrate being provided with a first front surface and a first back surface which are opposite, and the dielectric layer being located at the first front surface; a connecting hole, penetrating through the substrate and extending into the dielectric layer; a first insulating layer, located at the surface of an inner wall of the connecting hole; a protective barrier layer, located at the surface of the first insulating layer and grounded; a second insulating layer, located at the surface of the protective barrier layer; and a connecting structure, located at the surface of the second insulating layer and filling up the connecting hole.