TSV Interconnection Air Gap Structure for Lower RC Delay
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Solution Overview
Problem
Existing semiconductor devices face limitations such as unsatisfactory resistance-capacitance (RC) delay and low reliability due to parasitic capacitance, which hinder faster operation speeds and reliability.
Innovation Solution
A semiconductor device with an interconnection structure featuring a metal connection member surrounded by an annular hollow space, a dielectric liner layer, and a liner cover, forming an air gap that reduces parasitic capacitance, along with a manufacturing method that includes forming a substrate with insulating dielectric layers and metal connection members to enhance connectivity and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional interconnection structures are used, then device integration is achieved, but parasitic capacitance increases causing unsatisfactory RC delay and low reliability
Solution Approach 1:
The patent introduces an air gap (a porous/void structure) between the metal connection member and surrounding dielectric layers. This air gap has significantly lower permittivity than solid dielectric materials, thereby reducing parasitic capacitance formed between adjacent conductive structures. The air gap acts as a low-k dielectric region that minimizes capacitive coupling and improves signal integrity.
Solution Approach 2:
The patent extracts or removes dielectric material to create an air gap region around the metal connection member. By taking out the solid dielectric material in specific regions and replacing it with air (vacuum), the parasitic capacitance is reduced. This extraction creates a low-k environment that improves RC delay characteristics without compromising the structural integrity of the device.
2Productivity
If higher integration is achieved, then faster speeds and larger storage capacities are obtained, but feature size decreases leading to increased parasitic effects
Solution Approach 1:
The patent applies local quality by creating air gaps only in specific regions around metal connection members where parasitic capacitance is most critical, rather than uniformly throughout the entire device. This localized approach reduces parasitic effects at high-density interconnection points while maintaining the overall high integration level and small feature sizes required for advanced technology nodes.
Solution Approach 2:
By introducing air gaps (porous structures) locally around critical interconnection elements, the patent reduces parasitic capacitance in high-density regions. This allows the device to maintain high integration levels with small feature sizes while mitigating the increased parasitic effects that typically accompany higher integration.
3Speed
If signal transmission paths are shortened, then operation speed increases, but RC delay becomes more critical due to reduced margin
Solution Approach 1:
The air gap introduces a low-k dielectric region that reduces parasitic capacitance in the interconnection path. By lowering the capacitance component of RC delay, the patent improves signal transmission performance even with shortened paths, maintaining reliability while achieving faster operation speeds.
Solution Approach 2:
The patent changes the dielectric parameter (permittivity) by introducing an air gap with much lower permittivity than solid dielectric materials. This parameter change reduces the capacitive component of RC delay, allowing shorter signal paths to maintain or improve timing performance and reliability despite reduced physical margins.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces parasitic capacitance and RC delays, improving the operating speed and reliability of semiconductor devices by creating a uniform air gap within the interconnection structure.
Implementation Method 1
forming an air gap that reduces parasitic capacitance
Data Source
AI summary
A semiconductor device and related manufacturing methods are provided. The semiconductor device includes one interconnection structure including: a substrate; a first insulating dielectric layer underneath a lower surface of the substrate; a second insulating dielectric layer on an upper surface of the substrate; a first connecting pad disposed within the first insulating dielectric layer; a metal connection member penetrating through a portion of the second insulating dielectric layer, the substrate and a portion of the first insulating dielectric layer to connect the first connecting pad; and a second connecting pad disposed within the second insulating dielectric layer and connecting the metal connection member. The metal connection member may be a Through-Silicon Via (TSV). The device includes a confined air gap surrounding the metal connection member, which improves the performance and reliability of the device.