TSV Alignment Marks for Substrate Misalignment

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Solution Overview

Problem

The existing dual-side alignment methods for forming three-dimensional integrated circuit structures using through-substrate vias (TSVs) face accuracy issues due to limitations in infrared alignment systems and thickness variations in thinned silicon substrates, resulting in misalignment as high as 2 μm.

Innovation Solution

A novel dual-side alignment mark system where through-substrate vias (TSVs) are used simultaneously with functional TSVs, with alignment-mark TSVs formed to improve alignment accuracy by using the same manufacturing processes, reducing the need for separate alignment mark formation and minimizing misalignment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional separate alignment mark formation processes are used, then alignment marks can be formed on the substrate, but manufacturing complexity and cost increase

Engineering Contradiction:
Improvealignment accuracyVSAvoidalignment mark formation process complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent combines the formation of functional TSVs and alignment-mark TSVs into a single integrated process. Both types of TSVs are formed simultaneously through the substrate using the same via formation steps, eliminating the need for separate alignment mark formation processes. This merging approach reduces manufacturing complexity while maintaining alignment accuracy, as the alignment marks are created as an inherent part of the TSV fabrication rather than as a separate post-processing step.

Inventive Principle:
Principle #5Merging (Combining)

2Ease of operation

If infrared alignment system is used for dual-side alignment, then alignment can be performed, but alignment accuracy is limited to about 2 μm due to system limitations and substrate thickness variation

Engineering Contradiction:
Improvedual-side alignment capabilityVSAvoidalignment accuracy
Core Design Contradiction:
Ease of operationVSMeasurement precision

Solution Approach 1:

The patent creates alignment-mark TSVs that are precise copies of the functional TSVs in terms of formation process and structural characteristics. These alignment-mark TSVs serve as exact replicas that can be reliably detected by the infrared alignment system, providing known reference positions that compensate for the system's inherent accuracy limitations. The copying approach ensures that alignment marks have the same optical and physical properties as functional TSVs, enabling accurate alignment despite substrate thickness variations.

Inventive Principle:
Principle #26Copying

3Ease of manufacture

If thinned silicon substrate is used to expose TSVs, then TSVs can be accessed from backside, but thickness variation reduces alignment precision

Engineering Contradiction:
Improvebackside access to TSVsVSAvoidalignment precision
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent introduces alignment-mark TSVs as intermediary reference structures that mediate between the physical substrate and the alignment measurement system. These intermediary markers provide stable, detectable reference points that are less sensitive to substrate thickness variations than direct TSV measurements. The alignment-mark TSVs act as buffer elements that translate the physical geometry into reliable alignment signals, compensating for the imprecision introduced by thinned substrate variations.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances alignment accuracy to less than 1 μm, reducing the costs associated with conventional alignment mark formation processes and improving the overall precision in forming backside features like redistribution lines and metal bumps.

Implementation Method 1

The dual-side alignment is performed from the backside using an infra-red (IR) alignment system for locating the front-side alignment marks, wherein the infra-red light emitted by the IR alignment system penetrates through the thinned silicon substrate to reach the front-side alignment marks

Methodology Applied
Scientific EffectInfra-red light penetration: Infrared Radiation

Data Source

PatentUS10910267B2Alignment marks in substrate having through-substrate via (TSV)
Publication Date: 2021.02.02 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US10910267B2 patent drawing
  • US10910267B2 patent drawing
  • US10910267B2 patent drawing

AI summary

A device includes a substrate, and an alignment mark including a conductive through-substrate via (TSV) penetrating through the substrate.