TSV Electrode Alloy Layer Suppresses Crystal Grain Extrusion
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Solution Overview
Problem
The use of through-silicon-via (TSV) electrodes in multi-chip stacked packages is associated with issues such as crystal grain extrusion due to thermal stress, leading to contact failures and crack failures, which affect the performance of semiconductor devices.
Innovation Solution
A semiconductor device with through electrodes configured to reduce crystal grain extrusion, featuring a metal layer and an alloy layer with different metallic elements, where the alloy layer has a smaller crystal grain size than the metal layer, and is designed to suppress crystal grain growth, thereby enhancing contact resistance and preventing failures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If through-silicon-via (TSV) electrodes are used in multi-chip stacked packages, then device integration density and performance are improved, but crystal grain extrusion occurs due to thermal stress leading to contact failures and crack failures
Solution Approach 1:
The patent applies composite materials by forming an alloy layer comprising copper and tin (with tin content of 1-10 at%) over a copper metal layer. This composite structure combines the high conductivity of copper with the grain-refining effect of tin, creating a material that maintains electrical performance while suppressing crystal grain extrusion under thermal stress, thereby resolving the contradiction between integration density and contact reliability
Solution Approach 2:
The patent changes the compositional parameters of the electrode material by introducing tin into the copper layer to form an alloy layer with controlled tin concentration (1-10 at%). This parameter change modifies the crystal grain growth characteristics, suppressing extrusion during thermal cycling while maintaining the electrical conductivity required for high-density integration, thus improving both reliability and productivity
2Productivity
If through-silicon-via (TSV) electrodes are used in multi-chip stacked packages, then device integration density is improved, but crystal grain extrusion due to thermal stress causes crack failures
Solution Approach 1:
The patent employs composite materials by creating an alloy layer of copper and tin (1-10 at% Sn) on the copper metal layer. The tin component acts as a grain boundary stabilizer that prevents crystal grain extrusion under thermal stress, thereby enhancing crack resistance while maintaining the high integration density enabled by TSV technology
Solution Approach 2:
The patent modifies the material composition parameters by adding tin to copper, forming an alloy layer with controlled tin content (1-10 at%). This compositional change fundamentally alters the crystal grain growth behavior, suppressing extrusion during thermal cycling and preventing crack formation, thus improving crack resistance without compromising integration density
3Ease of manufacture
If a single metal layer is used in through electrodes, then manufacturing simplicity is maintained, but crystal grain growth occurs under thermal stress leading to contact failures
Solution Approach 1:
The patent applies composite materials by forming an alloy layer comprising copper and tin (with tin content of 1-10 at%) over a copper metal layer. This composite structure combines the high conductivity of copper with the grain-refining effect of tin, creating a material that maintains electrical performance while suppressing crystal grain extrusion under thermal stress, thereby resolving the contradiction between integration density and contact reliability
Solution Approach 2:
The patent changes the compositional parameters of the electrode material by introducing tin into the copper layer to form an alloy layer with controlled tin concentration (1-10 at%). This parameter change modifies the crystal grain growth characteristics, suppressing extrusion during thermal cycling while maintaining the electrical conductivity required for high-density integration, thus improving both reliability and productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses crystal grain growth and protrusion, improving contact resistance and reliability between the through electrode and upper interconnection lines, reducing the risk of contact failures and cracking in semiconductor devices.
Implementation Method 1
a crystal grain size of the alloy layer may be smaller than that of the metal layer
Data Source
AI summary
Provided are semiconductor devices and methods of fabricating the same. The device may include a substrate including a first surface and a second surface opposing each other, a through-silicon-via (TSV) electrode provided in a via hole that may be formed to penetrate the substrate, and an integrated circuit provided adjacent to the through electrode on the first surface. The through electrode includes a metal layer filling a portion of the via hole and an alloy layer filling a remaining portion of the via hole. The alloy layer contains at least two metallic elements, one of which may be the same as that contained in the metal layer, and the other of which may be different from that contained in the metal layer.