TSV Barrier Structure for Moisture-Resistant Backside Etching
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Solution Overview
Problem
The formation of through-silicon via (TSV) structures in semiconductor devices can lead to moisture and contaminant intrusion, particularly during backside etching processes, which can degrade die performance and reliability.
Innovation Solution
The implementation of TSV barrier structures, including a first seal ring and a barrier line, configured to surround the TSV structure laterally and prevent moisture and contaminant intrusion, while allowing for TSV formation using backside etching processes without degrading die performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If backside etching processes are used for TSV formation, then productivity and integration density are improved, but moisture and contaminant intrusion occurs degrading reliability
Solution Approach 1:
The patent divides the TSV structure into multiple segments with distinct functional layers: a first barrier layer at the TSV opening, a second barrier layer at the TSV bottom, and a seal ring structure. This segmentation allows each layer to address specific contamination risks independently while maintaining overall reliability during backside etching processes.
Solution Approach 2:
The patent applies preliminary protective actions by forming barrier layers and seal ring structures before the backside etching process. The first barrier layer is deposited on the front surface, the second barrier layer is formed at the TSV bottom, and the seal ring is created to prevent moisture and contaminant intrusion during the subsequent etching operation.
2Reliability
If TSV barrier structures are added to prevent contaminant intrusion, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent merges multiple protective functions into a unified TSV barrier structure that integrates the first barrier layer, second barrier layer, and seal ring structure. This combined structure prevents contaminant intrusion while maintaining manufacturing simplicity through a unified design approach that can be implemented in existing fabrication processes.
Solution Approach 2:
The TSV barrier structure performs multiple functions simultaneously: the first barrier layer prevents contaminant intrusion from the front surface, the second barrier layer protects the TSV bottom, and the seal ring structure provides lateral protection. This multi-functionality reduces the need for separate protective structures, thereby limiting complexity increase.
Data Source
AI summary
A die includes: a semiconductor substrate having a front side and an opposing backside; a dielectric structure including a substrate oxide layer disposed on the front side of the semiconductor substrate and interlayer dielectric (ILD) layers disposed on the substrate oxide layer; an interconnect structure disposed in the dielectric structure; a through-silicon via (TSV) structure extending in a vertical direction from the backside of the semiconductor substrate through the front side of the semiconductor substrate, such that a first end of the TSV structure is disposed in the interconnect structure; and a TSV barrier structure including a barrier line that contacts the first end of the TSV structure, and a first seal ring disposed in the substrate oxide layer and that surrounds the TSV structure in a lateral direction perpendicular to the vertical direction.