TSV Barrier Structure for Moisture-Resistant Semiconductor Dies
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Solution Overview
Problem
The formation of through-silicon via (TSV) structures in semiconductor devices is challenged by the intrusion of contaminants such as moisture, which can degrade die performance during back side etching processes.
Innovation Solution
The implementation of a TSV barrier structure that includes a first seal ring and a barrier line surrounding the TSV, configured to reduce and prevent moisture intrusion, using a combination of back side etching and deposition processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If back side etching processes are used to form TSV structures, then integration density and bandwidth are improved, but contaminant intrusion such as moisture degrades die performance
Solution Approach 1:
A barrier structure comprising a barrier line and seal ring is introduced as an intermediary element between the TSV structure and the external environment. The barrier line is formed surrounding the TSV structure, and the seal ring is formed surrounding the barrier line, creating a protective intermediary layer that prevents moisture and contaminants from reaching the TSV structure during back side etching processes.
Solution Approach 2:
The barrier structure is formed in advance before the back side etching process to prevent contaminant intrusion. By establishing the barrier line and seal ring beforehand, the patent creates a protective configuration that proactively counteracts the harmful effects of moisture and contaminants that would otherwise penetrate during the etching process.
2Device complexity
If TSV structures are formed without barrier structures, then manufacturing complexity is reduced, but die performance and reliability deteriorate due to moisture intrusion
Solution Approach 1:
The barrier structure serves as a mediating protective layer that reconciles the conflict between manufacturing simplicity and device reliability. While it does add structural elements (barrier line and seal ring), these are integrated into the existing TSV formation process using standard deposition and etching techniques, making the added complexity manageable while significantly improving reliability.
Solution Approach 2:
The barrier structure is formed as a preliminary protective measure before the TSV is fully exposed to the environment during back side processing. This preliminary action ensures that when the back side is etched and the TSV is accessed, the barrier is already in place to prevent moisture and contaminant intrusion, thereby ensuring die performance without requiring complex post-processing steps.
3Object-affected harmful factors
If barrier structures are added to prevent contaminant intrusion, then die performance is maintained, but device complexity increases
Solution Approach 1:
The barrier structure is segmented into two distinct functional components: the barrier line that directly surrounds the TSV structure and provides the primary barrier function, and the seal ring that surrounds the barrier line and provides additional sealing and structural support. This segmentation allows each component to be optimized for its specific function while keeping the overall structure manageable.
Solution Approach 2:
The barrier structure applies local quality by concentrating the barrier function precisely where it is needed - immediately surrounding the TSV structure with the barrier line, and then providing extended protection with the seal ring. This localized approach ensures that the complexity is confined to the critical TSV region rather than being distributed throughout the entire die, minimizing overall device complexity while maximizing protective effectiveness.
Data Source
AI summary
A die includes: a semiconductor substrate having a front side and an opposing back side; a dielectric structure including a substrate oxide layer disposed on the front side of the semiconductor substrate and interlayer dielectric (ILD) layers disposed on the substrate oxide layer; an interconnect structure disposed in the dielectric structure; a through-silicon via (TSV) structure extending in a vertical direction from the back side of the semiconductor substrate through the front side of the semiconductor substrate, such that a first end of the TSV structure is disposed in the interconnect structure; and a TSV barrier structure including a barrier line that contacts the first end of the TSV structure, and a first seal ring disposed in the substrate oxide layer and that surrounds the TSV structure in a lateral direction perpendicular to the vertical direction.