Through Silicon Via Bridge Interconnect for High Density Packaging
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current IC packaging methods, such as wire bonding and flip-chip solderball packaging, face limitations in interconnect density and material costs, with gold wire being expensive and wire bonding restricting finer pitch interconnections due to tool dimensions and lead inductance issues.
Innovation Solution
The use of a semiconductor interconnect bridge die with through silicon vias (TSVs) and interconnect lines to connect side-by-side semiconductor dies, allowing for finer pitch interconnects and reducing material costs by using alternative metals and simplifying assembly processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wire bonding is used to interconnect semiconductor dies, then interconnection between dies is achieved, but the number of interconnects is limited by the size of the interconnects and lead inductance limits performance
Solution Approach 1:
A bridge die is introduced as an intermediary component between the two semiconductor dies. The bridge die contains beam leads that extend over and contact bonding pads on both dies, enabling interconnection without direct wire bonding between the dies. This intermediary structure eliminates lead inductance issues and allows finer pitch interconnects.
Solution Approach 2:
The interconnection approach transitions from planar wire bonding to a three-dimensional structure using a bridge die with overhanging beam leads. The bridge die is positioned between the dies with beam leads extending vertically and horizontally to contact bonding pads, utilizing spatial dimensions to achieve higher interconnect density.
2Reliability
If gold wire is used for wire bonding, then interconnection is achieved, but the net cost of the package increases significantly
Solution Approach 1:
The bridge die uses alternative interconnect materials such as copper or aluminum instead of expensive gold wire. These materials are less costly and can be implemented through standard semiconductor fabrication processes, significantly reducing the material cost of the package while maintaining interconnection quality.
Solution Approach 2:
The interconnect material parameter is changed from gold to alternative materials like copper or aluminum. This parameter change reduces material cost while the bridge die structure compensates to maintain reliable electrical connections through properly designed beam leads and bonding pad contacts.
3Reliability
If beam leads with overhang are used to interconnect dies, then interconnection is achieved, but handling and assembling beam leads becomes difficult
Solution Approach 1:
The beam leads are pre-formed and attached to the bridge die during semiconductor fabrication processes before final assembly. The overhanging structure is created in advance during wafer-level processing, eliminating the need for difficult manual handling and assembly of delicate beam leads later in the manufacturing process.
Solution Approach 2:
The bridge die fabrication is merged with standard semiconductor manufacturing processes. The beam leads are formed, patterned, and attached to the bridge die substrate using conventional semiconductor fabrication techniques, integrating the complex beam lead structure into a streamlined manufacturing process rather than requiring separate assembly steps.
4Reliability
If bridge elements occupy space between two dies, then interconnection is achieved, but the space between dies is reduced
Solution Approach 1:
The bridge die is implemented as a thin structure with beam leads that extend minimally into the space between dies. The thin film nature of the bridge die reduces the vertical and horizontal space occupation, allowing close spacing of the interconnected dies while maintaining functional interconnection through the bridge structure.
Data Source
Figure 1
Figure 2
Figure 3~4
AI summary
An integrated circuit bridge interconnect system includes a first die and a second die provided in a side by side configuration and electrically interconnected to each other by a bridge die. The bridge die includes through silicon vias (TSVs) to connect conductive interconnect lines on the bridge die to the first die and the second die. Active circuitry, other than interconnect lines, may be provided on the bridge die. At least one or more additional die may be stacked on the bridge die and interconnected to the bridge die.