TSV Interconnect Bridge Embedding for Efficient Top-Die Power Delivery
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Solution Overview
Problem
Existing interconnect bridges in semiconductor devices face challenges in efficiently delivering power to top dies due to limitations in current technology, which results in increased power consumption and gaps in electrical coupling, leading to potential degradation of chip performance and effectiveness.
Innovation Solution
The implementation of interconnect bridges with through silicon vias (TSVs) that directly transmit power from the package substrate to top dies, coupled using a thermal compression bonding process and filled with a fill material to encapsulate and secure the connection, reducing gaps and enhancing power delivery.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional interconnect bridges are used to connect semiconductor dies to package substrate, then mechanical coupling is achieved, but electrical coupling gaps remain and power delivery efficiency deteriorates
Solution Approach 1:
Through silicon vias (TSVs) are formed through the entire thickness of the interconnect bridge die before die attachment, pre-establishing electrical pathways from the bottom surface to the top surface. This preliminary action ensures that electrical coupling is established before the die is mounted to the package substrate, eliminating gaps in electrical connectivity and improving power delivery efficiency without increasing power consumption.
Solution Approach 2:
The TSV structure acts as an intermediary conductive pathway between the package substrate and the top die. By introducing this intermediate conductive element that extends through the interconnect bridge die, the patent creates a continuous electrical pathway that mediates the connection between substrate and die, eliminating electrical coupling gaps and improving power transfer efficiency.
2Strength
If interconnect bridges are embedded in package substrate, then mechanical support is provided, but gaps in electrical coupling degrade performance
Solution Approach 1:
The interconnect bridge die is designed to simultaneously provide both mechanical support and electrical connectivity functions. By forming TSVs through the die and attaching it to the package substrate with conductive bonding, the structure serves dual purposes: it mechanically supports the top die while also providing continuous electrical pathways, eliminating the need for separate mechanical and electrical coupling mechanisms.
Solution Approach 2:
The patent employs composite structures combining different materials and functions within the interconnect bridge assembly. The interconnect bridge die itself is a composite of semiconductor material containing conductive TSVs, and the bonding interface uses conductive materials to join the die to the substrate. This composite approach ensures both mechanical strength and electrical conductivity are achieved simultaneously.
3Ease of manufacture
If conventional die attachment methods are used, then simple assembly is achieved, but power delivery efficiency to top dies deteriorates
Solution Approach 1:
The TSVs are formed through the interconnect bridge die during the semiconductor fabrication process before die attachment. This preliminary formation of conductive pathways integrates power delivery infrastructure into the manufacturing process itself, so that when the die is subsequently attached to the substrate, efficient power delivery is already established without requiring additional complex assembly steps.
Solution Approach 2:
The patent merges the power delivery pathway formation with the die fabrication process by forming TSVs during semiconductor manufacturing. This combining of power infrastructure creation with die fabrication integrates what could be separate processes into a unified manufacturing approach, maintaining ease of manufacture while achieving improved power delivery efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves power delivery to top dies, reducing power consumption and enhancing chip performance by ensuring effective electrical and mechanical coupling, thus addressing the limitations of existing interconnect bridges.
Implementation Method 1
coupled using a thermal compression bonding process
Data Source
AI summary
Example methods and apparatus for embedding interconnect bridges having through silicon vias in substrates are disclosed. An example semiconductor package a bridge die disposed in a recess of an underlying substrate, the bridge die including a via that electrically couples a first contact on a first side of the bridge die and a second contact on a second side of the bridge die, the recess extending to a first surface of the underlying substrate; a bond material to electrically and mechanically couple the first contact and an interconnect of the underlying substrate; and a fill material positioned between the first side of the bridge die and the first surface of the underlying substrate.