TSV Semiconductor Structure With Buffered Interconnect Spacing
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Solution Overview
Problem
The direct contact between conductive pillars and electrical connection layers in traditional Through Silicon Via (TSV) technology limits circuit design area and is prone to thermal stress, reducing the available space for circuit layout due to the absence of spacing and the need for a Keep Out Zone (KOZ).
Innovation Solution
A semiconductor structure where a conductive pillar is connected to an electrical connection layer through a smaller connecting structure with a different material, allowing for a spacing between them, which reduces thermal stress and increases the area for circuit design by using a connecting structure with a smaller orthographic projection area than the conductive pillar, and incorporating dielectric layers as stress buffers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the conductive pillar directly contacts the electrical connection layer, then the manufacturing process is simple, but the area for circuit layout is reduced due to the absence of spacing and the need for KOZ
Solution Approach 1:
An insulating structure is introduced as an intermediary element between the conductive pillar and the electrical connection layer. This mediator provides both electrical insulation and physical spacing, enabling circuit layouts in areas that would otherwise be KOZ regions, thereby increasing the usable circuit layout area while maintaining manufacturing feasibility
Solution Approach 2:
The direct contact interface between the conductive pillar and electrical connection layer is segmented by introducing a separate insulating structure. This segmentation creates distinct functional zones: the conductive pillar for signal transmission, the insulating structure for isolation and spacing, and the electrical connection layer for interconnection, allowing circuit elements to be placed in the spacing region
2Shape
If the conductive pillar directly contacts the electrical connection layer, then the structure is compact, but thermal stress causes extrusion on adjacent structures
Solution Approach 1:
The insulating structure serves as a thermal buffer and stress distribution mediator between the conductive pillar and the electrical connection layer. During thermal expansion, this intermediary layer distributes the thermal stress over a larger area, preventing concentrated extrusion forces that would damage adjacent structures, while still maintaining overall structural compactness
Solution Approach 2:
The insulating structure is pre-positioned between the conductive pillar and electrical connection layer to provide beforehand cushioning against thermal stress. This protective layer is in place before thermal cycling occurs, cushioning the adjacent structures from thermal extrusion forces and preventing damage
3Ease of manufacture
If no spacing is provided between the conductive pillar and electrical connection layer, then the manufacturing process is simplified, but circuit design is restricted in the KOZ region
Solution Approach 1:
The insulating structure acts as a mediator that reconciles manufacturing simplicity with design flexibility. It provides the necessary spacing for circuit design in KOZ regions while being integrated into the manufacturing process in a way that does not significantly complicate production, thus maintaining ease of manufacture while enhancing adaptability
Solution Approach 2:
The insulating structure performs multiple functions simultaneously: it provides electrical insulation, creates physical spacing for circuit layout, distributes thermal stress, and enables circuit design in previously restricted KOZ regions. This multi-functionality increases circuit design flexibility without adding significant manufacturing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures stable electric signal transmission while increasing the area for circuit layout by providing space between the conductive pillar and the electrical connection layer, reducing thermal stress, and allowing for more diverse and efficient circuit design in semiconductor structures.
Implementation Method 1
when the conductive pillar expands due to heating, it is easy to cause extrusion on a structure adjacent to the conductive pillar
Data Source
Figure 1~2
Figure 3~4
Figure 5~7
AI summary
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a base, a conductive pillar at least located in the base, connecting structures and an electrical connection layer. At least one connecting structure is electrically connected to an end of the conductive pillar, the material of the connecting structure is different from that of the conductive pillar, and a total area of an orthographic projection of the connecting structure on the base is less than an area of an orthographic projection of the conductive pillar on the base. The electrical connection layer is electrically connected to an end of the connecting structure distal from the conductive pillar,.