TSV Connection Region Layout With Integrated Decoupling Capacitor
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Solution Overview
Problem
Existing semiconductor devices face challenges in increasing integration density and improving the reliability of through-silicon vias (TSVs) as sizes and design rules are reduced, leading to potential substrate damage and thermal stress.
Innovation Solution
Incorporating a decoupling capacitor and epitaxial patterns in a keep-out zone around the through-via, along with a middle connection layer and interconnection layer, to enhance the structural integrity and electrical connectivity of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If TSV sizes are reduced to increase integration density, then integration density is improved, but substrate damage and thermal stress increase
Solution Approach 1:
The patent applies local quality by creating a keep-out zone around the through-via where no active devices are placed. This localized structural modification allows the through-via to be positioned in high-stress areas without compromising device reliability, thereby enabling higher integration density in non-keep-out zones while maintaining substrate integrity.
Solution Approach 2:
The patent introduces an intermediary structure (the keep-out zone) that mediates between the through-via and surrounding active devices. This intermediary region isolates the thermal and mechanical stress generated by the through-via from adjacent devices, allowing reduced TSV sizes for higher density while preventing substrate damage through stress isolation.
2Productivity
If more components are integrated in the connection region, then integration density is improved, but device complexity increases
Solution Approach 1:
The patent merges the keep-out zone with the connection region, allowing the decoupling capacitor to be positioned within the connection region while maintaining the protective isolation of the keep-out zone. This merging enables multiple components (through-via, decoupling capacitor, active devices) to be integrated in the connection region without significantly increasing structural complexity, as they share the same regional framework.
Solution Approach 2:
The connection region is designed with multi-functionality, serving both as a connection area for through-vias and as a location for integrating additional components like decoupling capacitors. This universal design allows the connection region to fulfill multiple functions without proportionally increasing device complexity, thereby improving integration density efficiently.
3Reliability
If a decoupling capacitor is added near the through-via, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent merges the decoupling capacitor with the keep-out zone structure, positioning the capacitor within or adjacent to the keep-out zone. This merging allows the decoupling capacitor to be integrated without adding significant structural complexity, as it utilizes the existing spatial framework of the keep-out zone, thereby improving reliability through thermal stress reduction while maintaining manageable device complexity.
Solution Approach 2:
The patent converts the potentially harmful thermal stress from the through-via into a beneficial design feature by positioning the decoupling capacitor near the through-via within the keep-out zone. The capacitor absorbs thermal energy and reduces thermal stress, transforming the harmful thermal effect into a benefit. This approach improves reliability while the shared spatial arrangement with the keep-out zone minimizes the increase in device complexity.
Data Source
AI summary
A semiconductor device includes a semiconductor substrate including a connection region, a pair of epitaxial patterns provided at the semiconductor substrate, a capacitor disposed between the pair of epitaxial patterns, a middle connection layer on the capacitor, an interconnection layer on the middle connection layer, and a through-via provided under the interconnection layer and penetrating the connection region of the semiconductor substrate. The capacitor includes an upper portion of the semiconductor substrate between the pair of epitaxial patterns, a metal electrode on the upper portion of the semiconductor substrate, and a dielectric pattern disposed between the upper portion of the semiconductor substrate and the metal electrode. The through-via is connected to the capacitor through the interconnection layer and the middle connection layer.