TSV Cavity Assembly for Logic Chip Heat Sink Coupling
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Solution Overview
Problem
Conventional semiconductor device assemblies with through-silicon vias (TSVs) face inefficiencies in thermal management, particularly for heat-generating components like logic devices, as they are often positioned far from the heat sink, leading to inefficient cooling due to their placement on the opposite side of the TSV stack.
Innovation Solution
The semiconductor device assembly incorporates a top semiconductor substrate with a cavity that houses an additional logic device, allowing it to be positioned near a thermally conductive heat sink, with TSVs exposed at the cavity's bottom surface for direct electrical coupling, enhancing thermal conductivity and reducing thermal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat-generating logic devices are positioned on the opposite side of the TSV stack from the heat sink, then electrical connectivity is maintained through conventional packaging, but thermal management efficiency deteriorates due to increased thermal resistance and reduced cooling effectiveness
Solution Approach 1:
The patent introduces a cavity dimension within the top semiconductor substrate, allowing logic devices to be positioned in a third spatial location (within the cavity) rather than only on the top or bottom surfaces. This dimensional change enables direct thermal coupling with the heat sink while maintaining electrical connectivity through TSVs, resolving the thermal management contradiction.
Solution Approach 2:
The logic device is nested within the cavity of the top semiconductor substrate, which itself is part of the stacked semiconductor assembly. This nesting arrangement allows the logic device to be thermally coupled to the heat sink through the substrate while maintaining compact packaging, improving thermal efficiency without significantly increasing overall device complexity.
2Ease of manufacture
If heat-generating logic devices are positioned far from the heat sink, then conventional packaging layouts are maintained, but cooling efficiency deteriorates due to increased thermal resistance
Solution Approach 1:
The patent creates a localized cavity region within the top semiconductor substrate specifically designed to house logic devices near the heat sink. This local structural modification enables improved thermal coupling for heat-generating components without requiring changes to the overall packaging layout or manufacturing process, thus maintaining ease of manufacture while improving cooling efficiency.
3Device complexity
If logic devices are positioned on the opposite side of the TSV stack from the heat sink, then conventional device placement is maintained, but thermal conductivity deteriorates due to increased thermal resistance
Solution Approach 1:
The top semiconductor substrate is segmented to create a cavity that separates the logic device placement region from the main stacked assembly. This segmentation allows the logic device to be positioned in a dedicated thermal management zone within the cavity, enabling direct thermal coupling with the heat sink while maintaining the overall structural integrity and simplicity of the device placement configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves thermal management by positioning heat-generating devices close to the heat sink, enhancing cooling efficiency and enabling compact packaging while maintaining electrical connectivity through the TSVs.
Implementation Method 1
a thermally conductive heat sink coupled with the top surface of the additional logic device and the top surface of the semiconductor substrate
Data Source
AI summary
A semiconductor device includes a semiconductor substrate including a cavity and a peripheral region surrounding the cavity. The peripheral region includes a first surface and a second surface opposite the first surface. The cavity extends from the first surface partially through the semiconductor substrate to a third surface. The third surface is parallel to the first surface and is located between the first surface and the second surface. The semiconductor device also includes a plurality of through-silicon vias (TSVs) extending between the first surface and the third surface.


