Chip-Scale Cooling Device With TSVs and Flow Directing Features
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Solution Overview
Problem
Conventional heat removal systems for semiconductor devices are inefficient in removing heat flux, leading to uneven temperature distribution and potential device malfunction due to hotspots.
Innovation Solution
A chip-scale cooling structure incorporating through-silicon vias (TSVs) and micro-pillars within the inlet manifold to direct cooling fluid flow, enhancing heat transfer and uniformity, with metallized TSVs for electrical connectivity and improved thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional heat removal systems are used, then the system structure is simple, but heat removal efficiency is insufficient leading to hotspots
Solution Approach 1:
The cooling structure is divided into multiple substrate layers (first substrate layer with cooling channels, second substrate layer with nozzle structure, third substrate layer with inlet manifold) that can be independently fabricated and then integrated. This segmentation allows each layer to be optimized for its specific function while maintaining overall heat removal efficiency
Solution Approach 2:
The patent implements a nested structure where through-silicon vias penetrate through multiple substrate layers, with micro-pillars positioned within the inlet manifold. The TSVs provide vertical interconnects that nest through the layered structure, enabling compact integration of cooling channels, nozzles, and flow distribution features in a chip-scale configuration
2Productivity
If cooling fluid flows closer to the heat generating device, then heat removal efficiency improves, but flow distribution uniformity deteriorates
Solution Approach 1:
The inlet manifold incorporates micro-pillars at specific locations to locally modify flow characteristics. These micro-pillars create localized flow resistance that redistributes the cooling fluid more uniformly across the inlet, preventing preferential flow paths while maintaining close proximity to the heat generating device for efficient heat removal
Solution Approach 2:
The through-silicon vias serve as intermediary structures that connect the inlet manifold to the cooling channels in the first substrate layer. The TSVs act as flow distribution conduits that mediate between the inlet and the cooling channels, ensuring uniform flow delivery to multiple cooling zones while maintaining compact geometry
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cooling structure effectively balances cooling fluid flow, reduces hotspots, and enhances heat removal efficiency, ensuring stable operation of semiconductor devices by positioning cooling channels and fluid flow directing features closer to the heat source.
Implementation Method 1
a cooling fluid system... the cooling fluid will remove heat from the heat generating device
Implementation Method 2
The first substrate layer through-holes, the second substrate layer through-holes, and the third substrate layer through-holes are aligned into one or more TSVs and metallized
Data Source
AI summary
A cooling structure includes a first substrate layer including an array of cooling channels, a second substrate layer including a nozzle structure, an outlet manifold, and an outlet, a third substrate layer including an inlet, and inlet manifold, and one or more flow directing features are disposed within the inlet manifold. The one or more flow directing features include one or more micro-pillars extending into the cooling fluid flow path from the inlet manifold, the first substrate layer includes one or more first substrate layer through-holes, the second substrate layer includes one or more second substrate layer-through holes, and the third substrate layer includes one or more third-substrate layer through holes. The first substrate layer through-holes, the second substrate layer through-holes, and the third substrate layer through-holes are aligned into one or more TSVs and metallized.